Abstract
This conference paper describes the Czochralski (CZ) and float-zone (FZ) crystals were grown from experimental solar-grade silicon (SOG-Si) feedstock materials developed by Crystal Systems. The materials were metallurgical-grade Si and highly boron-doped p-type electronic-grade Si (EG-Si) reject material, both of which were gaseous melt-treated to remove boron. Crystal growth observations,lifetime and impurity characterization of the grown crystals, and device performance of wafers from them are presented. Devices made directly on treated high-B EG-Si feedstock have a little over half the efficiency of devices made from control CZ samples. However, devices on CZ and FZ crystals grown from the treated high-B EG-Si feedstock have comparable PV performance (14.0% and 13.8%efficiency, respectively) to that of CZ control samples (14.1%).
| Original language | American English |
|---|---|
| Number of pages | 7 |
| State | Published - 2002 |
| Event | 29th IEEE PV Specialists Conference - New Orleans, Louisiana Duration: 20 May 2002 → 24 May 2002 |
Conference
| Conference | 29th IEEE PV Specialists Conference |
|---|---|
| City | New Orleans, Louisiana |
| Period | 20/05/02 → 24/05/02 |
Bibliographical note
Prepared for the 29th IEEE PV Specialists Conference, 20-24 May; 2002, New Orleans, LouisianaNREL Publication Number
- NREL/CP-520-31442
Keywords
- crystals
- CZ Czochralski silicon
- electronic grade si (EG-Si)
- float zone (FZ)
- fourier transform infrared spectroscopy (FTIR)
- glow-discharge mass spectroscopy (GDMS)
- microcrystalline growth
- Normanski photomicrograph
- PV
- quantum efficiency (QE)
- solar-grade silicon (SOG-Si)