Float-Zone and Czochralski Crystal Growth and Diagnostic Solar Cell Evaluation of a New Solar-Grade Feedstock Source

T. F. Ciszek; M. R. Page; T. H. Wang; J. A. Casey

doi:10.1109/PVSC.2002.1190493

Float-Zone and Czochralski Crystal Growth and Diagnostic Solar Cell Evaluation of a New Solar-Grade Feedstock Source

T. F. Ciszek, M. R. Page, T. H. Wang, J. A. Casey

Chemistry and Nanoscience

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

Abstract

Czochralski (CZ) and float-zone (FZ) crystals were grown from experimental solar-grade silicon (SoG-Si) feedstock materials developed by Crystal Systems. The materials were metallurgical-grade Si and highly boron-doped p-type electronic-grade Si (EG-Si) reject material, both of which were gaseous melt-treated to remove boron. Crystal growth observations, lifetime and impurity characterization of the grown crystals, and device performance of wafers from them are presented. Devices made directly on treated high-B EG-Si feedstock have a little over half the efficiency of devices made from control CZ samples. However, devices on CZ and FZ crystals grown from the treated high-B EG-Si feedstock have comparable PV performance (14.0% and 13.8% efficiency, respectively) to that of CZ control samples (14.1%).

Original language	American English
Pages	210-213
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2002.1190493
State	Published - 2002
Event	Twenty-Ninth IEEE Photovoltaic Specialists Conference 2002 - New Orleans, Louisiana Duration: 19 May 2002 → 24 May 2002

Conference

Conference	Twenty-Ninth IEEE Photovoltaic Specialists Conference 2002
City	New Orleans, Louisiana
Period	19/05/02 → 24/05/02

Bibliographical note

For preprint version including full text online document, see NREL/CP-520-31442

NREL Publication Number

NREL/CP-520-33689

Access to Document

10.1109/PVSC.2002.1190493

Cite this

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title = "Float-Zone and Czochralski Crystal Growth and Diagnostic Solar Cell Evaluation of a New Solar-Grade Feedstock Source",

abstract = "Czochralski (CZ) and float-zone (FZ) crystals were grown from experimental solar-grade silicon (SoG-Si) feedstock materials developed by Crystal Systems. The materials were metallurgical-grade Si and highly boron-doped p-type electronic-grade Si (EG-Si) reject material, both of which were gaseous melt-treated to remove boron. Crystal growth observations, lifetime and impurity characterization of the grown crystals, and device performance of wafers from them are presented. Devices made directly on treated high-B EG-Si feedstock have a little over half the efficiency of devices made from control CZ samples. However, devices on CZ and FZ crystals grown from the treated high-B EG-Si feedstock have comparable PV performance (14.0% and 13.8% efficiency, respectively) to that of CZ control samples (14.1%).",

author = "Ciszek, {T. F.} and Page, {M. R.} and Wang, {T. H.} and Casey, {J. A.}",

note = "For preprint version including full text online document, see NREL/CP-520-31442; Twenty-Ninth IEEE Photovoltaic Specialists Conference 2002 ; Conference date: 19-05-2002 Through 24-05-2002",

year = "2002",

doi = "10.1109/PVSC.2002.1190493",

language = "American English",

pages = "210--213",

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AU - Ciszek, T. F.

AU - Page, M. R.

AU - Wang, T. H.

AU - Casey, J. A.

N1 - For preprint version including full text online document, see NREL/CP-520-31442

PY - 2002

Y1 - 2002

N2 - Czochralski (CZ) and float-zone (FZ) crystals were grown from experimental solar-grade silicon (SoG-Si) feedstock materials developed by Crystal Systems. The materials were metallurgical-grade Si and highly boron-doped p-type electronic-grade Si (EG-Si) reject material, both of which were gaseous melt-treated to remove boron. Crystal growth observations, lifetime and impurity characterization of the grown crystals, and device performance of wafers from them are presented. Devices made directly on treated high-B EG-Si feedstock have a little over half the efficiency of devices made from control CZ samples. However, devices on CZ and FZ crystals grown from the treated high-B EG-Si feedstock have comparable PV performance (14.0% and 13.8% efficiency, respectively) to that of CZ control samples (14.1%).

AB - Czochralski (CZ) and float-zone (FZ) crystals were grown from experimental solar-grade silicon (SoG-Si) feedstock materials developed by Crystal Systems. The materials were metallurgical-grade Si and highly boron-doped p-type electronic-grade Si (EG-Si) reject material, both of which were gaseous melt-treated to remove boron. Crystal growth observations, lifetime and impurity characterization of the grown crystals, and device performance of wafers from them are presented. Devices made directly on treated high-B EG-Si feedstock have a little over half the efficiency of devices made from control CZ samples. However, devices on CZ and FZ crystals grown from the treated high-B EG-Si feedstock have comparable PV performance (14.0% and 13.8% efficiency, respectively) to that of CZ control samples (14.1%).

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U2 - 10.1109/PVSC.2002.1190493

DO - 10.1109/PVSC.2002.1190493

M3 - Paper

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T2 - Twenty-Ninth IEEE Photovoltaic Specialists Conference 2002

Y2 - 19 May 2002 through 24 May 2002

ER -

Float-Zone and Czochralski Crystal Growth and Diagnostic Solar Cell Evaluation of a New Solar-Grade Feedstock Source

Abstract

Conference

Bibliographical note

NREL Publication Number

Access to Document

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