Float-Zone Silicon Crystal Growth as a Tool to Study the Influence of Defects and Impurities on Minority Carrier Lifetime and PV Device Performance

    Research output: Contribution to conferencePaper

    Original languageAmerican English
    Number of pages17
    StatePublished - 1994
    EventRole of Point Defects/Defect Complexes in Silicon Device Processing: Fourth Workshop - Beaver Creek, Colorado
    Duration: 27 Jun 199429 Jun 1994

    Conference

    ConferenceRole of Point Defects/Defect Complexes in Silicon Device Processing: Fourth Workshop
    CityBeaver Creek, Colorado
    Period27/06/9429/06/94

    NREL Publication Number

    • ACNR/CP-15454

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