Abstract
Alloying between CdS and CdTe at the CdS/CdTe interface interface is a function of the growth temperature and post-deposition CdCl2 heat treatment (HT). In devices prepared by different techniques, Te-rich CdSxTe1-x alloys with x = 0.04 to 0.08 have been identified. We present our work on thin-film couples of CdS and CdTe, which can withstand higher level of CdCl2 treatment without the adhesion problems typically encountered in the regular device structure. CdS films with a thickness of ∼100 nm were deposited by chemical-bath deposition on glass/SnO2 substrates, and CdTe films with a thickness of 300 and 800 nm were deposited by close-spaced sublimation. The samples were treated in the presence of vapor CdCl2 at 400°-450°C for 5 min. X-ray diffraction and optical analysis of the samples showed that S content in the CdSxTe1-x alloy increased systematically with the CdCl2 HT temperature. CdSxTe1-x alloy with x = 0.14 was identified for the samples treated at 430°C, which is much higher than expected from the miscibility gap at 430°C.
Original language | American English |
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Pages | 484-487 |
Number of pages | 4 |
State | Published - 2002 |
Event | 29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States Duration: 19 May 2002 → 24 May 2002 |
Conference
Conference | 29th IEEE Photovoltaic Specialists Conference |
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Country/Territory | United States |
City | New Orleans, LA |
Period | 19/05/02 → 24/05/02 |
Bibliographical note
For preprint version including full text online document, see NREL/CP-520-31435NREL Publication Number
- NREL/CP-520-33692