Formation and Characterization of CdSxTe1-x Alloys Prepared From Thin Film Couples of CdS and CdTe

Ramesh Dhere, Xuanzhi Wu, Dave Albin, Craig Perkins, Helio Moutinho, Tim Gessert

Research output: Contribution to conferencePaperpeer-review

6 Scopus Citations


Alloying between CdS and CdTe at the CdS/CdTe interface interface is a function of the growth temperature and post-deposition CdCl2 heat treatment (HT). In devices prepared by different techniques, Te-rich CdSxTe1-x alloys with x = 0.04 to 0.08 have been identified. We present our work on thin-film couples of CdS and CdTe, which can withstand higher level of CdCl2 treatment without the adhesion problems typically encountered in the regular device structure. CdS films with a thickness of ∼100 nm were deposited by chemical-bath deposition on glass/SnO2 substrates, and CdTe films with a thickness of 300 and 800 nm were deposited by close-spaced sublimation. The samples were treated in the presence of vapor CdCl2 at 400°-450°C for 5 min. X-ray diffraction and optical analysis of the samples showed that S content in the CdSxTe1-x alloy increased systematically with the CdCl2 HT temperature. CdSxTe1-x alloy with x = 0.14 was identified for the samples treated at 430°C, which is much higher than expected from the miscibility gap at 430°C.

Original languageAmerican English
Number of pages4
StatePublished - 2002
Event29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States
Duration: 19 May 200224 May 2002


Conference29th IEEE Photovoltaic Specialists Conference
Country/TerritoryUnited States
CityNew Orleans, LA

Bibliographical note

For preprint version including full text online document, see NREL/CP-520-31435

NREL Publication Number

  • NREL/CP-520-33692


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