Formation, Growth and Stability of the CdS/CuInSe2 Interface

L. L. KAZMERSKI, O. JAMJOUM, P. J. IRELAND, R. A. MICKELSEN, W. S. CHEN

Research output: Contribution to journalArticlepeer-review

42 Scopus Citations

Abstract

THE INITIAL FORMATION AND SUBSEQUENT DEVELOPMENT OF THE CDS/CUINSE//2 INTERFACE ARE INVESTIGATED. XPS DEPTH-COMPOSITIONAL DATA ARE USED TO IDENTIFY THE COMPOSITION OF A INTERFACIAL REACTED REGION BETWEEN THE CDS AND CU-TERNARY LAYERS. ANGULAR-RESOLVED XPS CONFIRM THE EXISTENCE OF THIS TRANSITION LAYER WHICH IS A MIXED CU//2S-CU//2S BINARY. AUGER TRANSITIONSIN THE XPS SPECTRA ARE USED TO RESOLVE THOSE COMPOUNDS. DIFFERENCES IN EELS SPECTRA AS A FUNCTION OF CDS GROWTH ARE ALSO ASCRIBED TO THE EXISTENCE OF THE INTERFACE REGION. THE EFFECTS OF ANNEALING ON THE INTEGRITY OF THIS INTERFACE AND PHOTOVOLTAIC PERFORMANCE OF THE DEVICE ARE ALSO PRESENTED.

Original languageAmerican English
Pages (from-to)486-490
Number of pages5
JournalJournal of vacuum science & technology
Volume21
Issue number2
DOIs
StatePublished - 1982
Externally publishedYes
EventPROC OF THE ANNU CONF ON THE PHYS AND CHEM OF SEMICOND INTERFACES, 9TH - Pacific Grove, CA, USA
Duration: 27 Jan 198229 Jan 1982

Bibliographical note

Work performed by Solar Energy Research Institute, Golden, Colorado and North Carolina State University, Raleigh, North Carolina

NREL Publication Number

  • ACNR/JA-213-4271

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