Abstract
THE INITIAL FORMATION AND SUBSEQUENT DEVELOPMENT OF THE CDS/CUINSE//2 INTERFACE ARE INVESTIGATED. XPS DEPTH-COMPOSITIONAL DATA ARE USED TO IDENTIFY THE COMPOSITION OF A INTERFACIAL REACTED REGION BETWEEN THE CDS AND CU-TERNARY LAYERS. ANGULAR-RESOLVED XPS CONFIRM THE EXISTENCE OF THIS TRANSITION LAYER WHICH IS A MIXED CU//2S-CU//2S BINARY. AUGER TRANSITIONSIN THE XPS SPECTRA ARE USED TO RESOLVE THOSE COMPOUNDS. DIFFERENCES IN EELS SPECTRA AS A FUNCTION OF CDS GROWTH ARE ALSO ASCRIBED TO THE EXISTENCE OF THE INTERFACE REGION. THE EFFECTS OF ANNEALING ON THE INTEGRITY OF THIS INTERFACE AND PHOTOVOLTAIC PERFORMANCE OF THE DEVICE ARE ALSO PRESENTED.
Original language | American English |
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Pages (from-to) | 486-490 |
Number of pages | 5 |
Journal | Journal of vacuum science & technology |
Volume | 21 |
Issue number | 2 |
DOIs | |
State | Published - 1982 |
Externally published | Yes |
Event | PROC OF THE ANNU CONF ON THE PHYS AND CHEM OF SEMICOND INTERFACES, 9TH - Pacific Grove, CA, USA Duration: 27 Jan 1982 → 29 Jan 1982 |
Bibliographical note
Work performed by Solar Energy Research Institute, Golden, Colorado and North Carolina State University, Raleigh, North CarolinaNREL Publication Number
- ACNR/JA-213-4271