Formation of CdxHg1-xTe Layers on CdTe after NP-Etching and HgTe-Graphite Pasting

Yanfa Yan; K. M. Jones; X. Wu; M. M. Al-Jassim

doi:10.1557/proc-763-b3.2

Formation of CdxHg1-xTe Layers on CdTe after NP-Etching and HgTe-Graphite Pasting

Yanfa Yan, K. M. Jones, X. Wu, M. M. Al-Jassim

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

1 Scopus Citations

Abstract

We report on our investigation of the microstructure and chemical composition at the CdTe/Te-rich interfaces generated by NP-etching polycrystalline and single-crystalline CdTe films and followed with HgTe-graphite pasting and thermal annealing. We find that after this process, a thin layer of Cd_xHg_1-xTe forms between CdTe and Te-rich layers, giving a structure like CdTe/Cd_xHg_1-xTe/Te. High-resolution electron microscopy reveals that the Cd_xHg _1-xTe layer has an epitaxial relationship with the CdTe. No Cd _xHg_1-xTe layer has been observed in bromine/methanol-etched samples or samples with intentionally deposited Te layers.

Original language	American English
Pages	119-124
Number of pages	6
DOIs	https://doi.org/10.1557/proc-763-b3.2
State	Published - 2003
Event	Compound Semiconductor Photovoltaics: Materials Research Society Symposium - San Francisco, California Duration: 22 Apr 2003 → 25 Apr 2003

Conference

Conference	Compound Semiconductor Photovoltaics: Materials Research Society Symposium
City	San Francisco, California
Period	22/04/03 → 25/04/03

NREL Publication Number

NREL/CP-520-33952

Access to Document

10.1557/proc-763-b3.2

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title = "Formation of CdxHg1-xTe Layers on CdTe after NP-Etching and HgTe-Graphite Pasting",

abstract = "We report on our investigation of the microstructure and chemical composition at the CdTe/Te-rich interfaces generated by NP-etching polycrystalline and single-crystalline CdTe films and followed with HgTe-graphite pasting and thermal annealing. We find that after this process, a thin layer of CdxHg1-xTe forms between CdTe and Te-rich layers, giving a structure like CdTe/CdxHg1-xTe/Te. High-resolution electron microscopy reveals that the CdxHg 1-xTe layer has an epitaxial relationship with the CdTe. No Cd xHg1-xTe layer has been observed in bromine/methanol-etched samples or samples with intentionally deposited Te layers.",

author = "Yanfa Yan and Jones, {K. M.} and X. Wu and Al-Jassim, {M. M.}",

year = "2003",

doi = "10.1557/proc-763-b3.2",

language = "American English",

pages = "119--124",

note = "Compound Semiconductor Photovoltaics: Materials Research Society Symposium ; Conference date: 22-04-2003 Through 25-04-2003",

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T1 - Formation of CdxHg1-xTe Layers on CdTe after NP-Etching and HgTe-Graphite Pasting

AU - Yan, Yanfa

AU - Jones, K. M.

AU - Wu, X.

AU - Al-Jassim, M. M.

PY - 2003

Y1 - 2003

N2 - We report on our investigation of the microstructure and chemical composition at the CdTe/Te-rich interfaces generated by NP-etching polycrystalline and single-crystalline CdTe films and followed with HgTe-graphite pasting and thermal annealing. We find that after this process, a thin layer of CdxHg1-xTe forms between CdTe and Te-rich layers, giving a structure like CdTe/CdxHg1-xTe/Te. High-resolution electron microscopy reveals that the CdxHg 1-xTe layer has an epitaxial relationship with the CdTe. No Cd xHg1-xTe layer has been observed in bromine/methanol-etched samples or samples with intentionally deposited Te layers.

AB - We report on our investigation of the microstructure and chemical composition at the CdTe/Te-rich interfaces generated by NP-etching polycrystalline and single-crystalline CdTe films and followed with HgTe-graphite pasting and thermal annealing. We find that after this process, a thin layer of CdxHg1-xTe forms between CdTe and Te-rich layers, giving a structure like CdTe/CdxHg1-xTe/Te. High-resolution electron microscopy reveals that the CdxHg 1-xTe layer has an epitaxial relationship with the CdTe. No Cd xHg1-xTe layer has been observed in bromine/methanol-etched samples or samples with intentionally deposited Te layers.

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U2 - 10.1557/proc-763-b3.2

DO - 10.1557/proc-763-b3.2

M3 - Paper

AN - SCOPUS:0344899094

SP - 119

EP - 124

T2 - Compound Semiconductor Photovoltaics: Materials Research Society Symposium

Y2 - 22 April 2003 through 25 April 2003

ER -

Formation of CdxHg1-xTe Layers on CdTe after NP-Etching and HgTe-Graphite Pasting

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