Abstract
We report on our investigation of the microstructure and chemical composition at the CdTe/Te-rich interfaces generated by NP-etching polycrystalline and single-crystalline CdTe films and followed with HgTe-graphite pasting and thermal annealing. We find that after this process, a thin layer of CdxHg1-xTe forms between CdTe and Te-rich layers, giving a structure like CdTe/CdxHg1-xTe/Te. High-resolution electron microscopy reveals that the CdxHg 1-xTe layer has an epitaxial relationship with the CdTe. No Cd xHg1-xTe layer has been observed in bromine/methanol-etched samples or samples with intentionally deposited Te layers.
| Original language | American English |
|---|---|
| Pages | 119-124 |
| Number of pages | 6 |
| DOIs | |
| State | Published - 2003 |
| Event | Compound Semiconductor Photovoltaics: Materials Research Society Symposium - San Francisco, California Duration: 22 Apr 2003 → 25 Apr 2003 |
Conference
| Conference | Compound Semiconductor Photovoltaics: Materials Research Society Symposium |
|---|---|
| City | San Francisco, California |
| Period | 22/04/03 → 25/04/03 |
NLR Publication Number
- NREL/CP-520-33952