Formation of InAs/GaAs Quantum Dots by Dewetting During Cooling

R. P. Mirin, A. Roshko, M. Van Der Puijl, A. G. Norman

Research output: Contribution to journalArticlepeer-review

4 Scopus Citations


The evolution of the RHEED pattern during the formation of InAs/GaAs QDs was followed. Data show that InAs epilayers can evolve during quenching from growth temperature and may have implications on the accuracy of measurements of the shapes and sizes of quantum dots formed at growth temperature.

Original languageAmerican English
Pages (from-to)1489-1492
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number4
StatePublished - 2002
EventProceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States
Duration: 6 Jan 200210 Jan 2002

NREL Publication Number

  • NREL/JA-520-33330


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