Formation of InAs/GaAs Quantum Dots by Dewetting During Cooling

R. P. Mirin; A. Roshko; M. Van Der Puijl; A. G. Norman

doi:10.1116/1.1495094

Formation of InAs/GaAs Quantum Dots by Dewetting During Cooling

R. P. Mirin, A. Roshko, M. Van Der Puijl, A. G. Norman

Materials Science

National Institute of Standards and Technology

Research output: Contribution to journal › Article › peer-review

4 Scopus Citations

Abstract

The evolution of the RHEED pattern during the formation of InAs/GaAs QDs was followed. Data show that InAs epilayers can evolve during quenching from growth temperature and may have implications on the accuracy of measurements of the shapes and sizes of quantum dots formed at growth temperature.

Original language	American English
Pages (from-to)	1489-1492
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	4
DOIs	https://doi.org/10.1116/1.1495094 https://doi.org/10.1116/1.1495094
State	Published - 2002
Event	Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States Duration: 6 Jan 2002 → 10 Jan 2002

NREL Publication Number

NREL/JA-520-33330

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title = "Formation of InAs/GaAs Quantum Dots by Dewetting During Cooling",

abstract = "The evolution of the RHEED pattern during the formation of InAs/GaAs QDs was followed. Data show that InAs epilayers can evolve during quenching from growth temperature and may have implications on the accuracy of measurements of the shapes and sizes of quantum dots formed at growth temperature.",

author = "Mirin, {R. P.} and A. Roshko and {Van Der Puijl}, M. and Norman, {A. G.}",

year = "2002",

doi = "10.1116/1.1495094",

language = "American English",

volume = "20",

pages = "1489--1492",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

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note = "Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces ; Conference date: 06-01-2002 Through 10-01-2002",

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T1 - Formation of InAs/GaAs Quantum Dots by Dewetting During Cooling

AU - Mirin, R. P.

AU - Roshko, A.

AU - Van Der Puijl, M.

AU - Norman, A. G.

PY - 2002

Y1 - 2002

N2 - The evolution of the RHEED pattern during the formation of InAs/GaAs QDs was followed. Data show that InAs epilayers can evolve during quenching from growth temperature and may have implications on the accuracy of measurements of the shapes and sizes of quantum dots formed at growth temperature.

AB - The evolution of the RHEED pattern during the formation of InAs/GaAs QDs was followed. Data show that InAs epilayers can evolve during quenching from growth temperature and may have implications on the accuracy of measurements of the shapes and sizes of quantum dots formed at growth temperature.

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U2 - 10.1116/1.1495094

DO - 10.1116/1.1495094

M3 - Article

AN - SCOPUS:0035982573

SN - 1071-1023

VL - 20

SP - 1489

EP - 1492

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

T2 - Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces

Y2 - 6 January 2002 through 10 January 2002

ER -

Formation of InAs/GaAs Quantum Dots by Dewetting During Cooling

Abstract

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