Formation of ZnTe:Cu/Ti Contacts at High Temperature for CdS/CdTe Devices

T. A. Gessert; S. Asher; S. Johnston; A. Duda; M. R. Young; T. Moriarty

doi:10.1109/WCPEC.2006.279482

Formation of ZnTe:Cu/Ti Contacts at High Temperature for CdS/CdTe Devices

T. A. Gessert, S. Asher, S. Johnston, A. Duda, M. R. Young, T. Moriarty

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

27 Scopus Citations

Abstract

We study the performance of CdS/CdTe thin-film devices contacted with ZnTe:Cu/Ti of various thickness at a higher-than-optimum temperature of ∼360°C At this temperature, optimum device performance requires the same thickness of ZnTe:Cu as for similar contacts formed at a lower temperature of 320°C C-V analysis indicates that a ZnTe:Cu layer thickness of <∼0.5 μm does not yield the degree of CdTe net acceptor concentration necessary to reduce space charge width to its optimum value for n-p device operation. The thickest ZnTe:Cu layer investigated (1 μm) yields the highest CdTe net acceptor concentration, lowest value of J_o, and highest V _oc. However, performance is limited for this device by poor fill factor. We suggest poor fill factor is due to Cu-related acceptors compensating donors in CdS.

Original language	American English
Pages	432-435
Number of pages	4
DOIs	https://doi.org/10.1109/WCPEC.2006.279482
State	Published - 2006
Event	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States Duration: 7 May 2006 → 12 May 2006

Conference

Conference	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Country/Territory	United States
City	Waikoloa, HI
Period	7/05/06 → 12/05/06

Bibliographical note

For preprint version see NREL/CP-520-39804

NREL Publication Number

NREL/CP-520-41281

Access to Document

10.1109/WCPEC.2006.279482

Cite this

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title = "Formation of ZnTe:Cu/Ti Contacts at High Temperature for CdS/CdTe Devices",

abstract = "We study the performance of CdS/CdTe thin-film devices contacted with ZnTe:Cu/Ti of various thickness at a higher-than-optimum temperature of ∼360°C At this temperature, optimum device performance requires the same thickness of ZnTe:Cu as for similar contacts formed at a lower temperature of 320°C C-V analysis indicates that a ZnTe:Cu layer thickness of <∼0.5 μm does not yield the degree of CdTe net acceptor concentration necessary to reduce space charge width to its optimum value for n-p device operation. The thickest ZnTe:Cu layer investigated (1 μm) yields the highest CdTe net acceptor concentration, lowest value of Jo, and highest V oc. However, performance is limited for this device by poor fill factor. We suggest poor fill factor is due to Cu-related acceptors compensating donors in CdS.",

author = "Gessert, \{T. A.\} and S. Asher and S. Johnston and A. Duda and Young, \{M. R.\} and T. Moriarty",

note = "For preprint version see NREL/CP-520-39804; 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 ; Conference date: 07-05-2006 Through 12-05-2006",

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doi = "10.1109/WCPEC.2006.279482",

language = "American English",

pages = "432--435",

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T1 - Formation of ZnTe:Cu/Ti Contacts at High Temperature for CdS/CdTe Devices

AU - Gessert, T. A.

AU - Asher, S.

AU - Johnston, S.

AU - Duda, A.

AU - Young, M. R.

AU - Moriarty, T.

N1 - For preprint version see NREL/CP-520-39804

PY - 2006

Y1 - 2006

N2 - We study the performance of CdS/CdTe thin-film devices contacted with ZnTe:Cu/Ti of various thickness at a higher-than-optimum temperature of ∼360°C At this temperature, optimum device performance requires the same thickness of ZnTe:Cu as for similar contacts formed at a lower temperature of 320°C C-V analysis indicates that a ZnTe:Cu layer thickness of <∼0.5 μm does not yield the degree of CdTe net acceptor concentration necessary to reduce space charge width to its optimum value for n-p device operation. The thickest ZnTe:Cu layer investigated (1 μm) yields the highest CdTe net acceptor concentration, lowest value of Jo, and highest V oc. However, performance is limited for this device by poor fill factor. We suggest poor fill factor is due to Cu-related acceptors compensating donors in CdS.

AB - We study the performance of CdS/CdTe thin-film devices contacted with ZnTe:Cu/Ti of various thickness at a higher-than-optimum temperature of ∼360°C At this temperature, optimum device performance requires the same thickness of ZnTe:Cu as for similar contacts formed at a lower temperature of 320°C C-V analysis indicates that a ZnTe:Cu layer thickness of <∼0.5 μm does not yield the degree of CdTe net acceptor concentration necessary to reduce space charge width to its optimum value for n-p device operation. The thickest ZnTe:Cu layer investigated (1 μm) yields the highest CdTe net acceptor concentration, lowest value of Jo, and highest V oc. However, performance is limited for this device by poor fill factor. We suggest poor fill factor is due to Cu-related acceptors compensating donors in CdS.

UR - https://www.scopus.com/pages/publications/41749096802

U2 - 10.1109/WCPEC.2006.279482

DO - 10.1109/WCPEC.2006.279482

M3 - Paper

AN - SCOPUS:41749096802

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EP - 435

T2 - 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

Y2 - 7 May 2006 through 12 May 2006

ER -

Formation of ZnTe:Cu/Ti Contacts at High Temperature for CdS/CdTe Devices

Abstract

Conference

Bibliographical note

NREL Publication Number

Access to Document

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