Four-Junction Solar Cell with 40% Target Efficiency Fabricated by Wafer Bonding and Layer Transfer: Final Technical Report, 1 January 2005 - 31 December 2007

NREL

    Research output: NREL › Subcontract Report

    Abstract

    We realized high-quality InGaP/GaAs 2-junction top cells on Ge/Si, InGaAs/InP bottom cells, direct-bond series interconnection of tandem cells, and modeling of bonded 3- and 4-junction device performance.
    Original languageAmerican English
    Number of pages17
    StatePublished - 2008

    Bibliographical note

    Work performed by California Institute of Technology, Pasadena, California

    NREL Publication Number

    • NREL/SR-520-44532

    Keywords

    • bottom cells
    • devices
    • direct bond
    • high quality
    • INGaAs/INP
    • InGaP/GaAs
    • modeling
    • performance
    • PV
    • solar cells
    • tandem
    • top cells
    • two-junction devices

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