Four-Junction Solar Cell with 40% Target Efficiency Fabricated by Wafer Bonding and Layer Transfer: Final Technical Report, 1 January 2005 - 31 December 2007

H.A. Atwater

Four-Junction Solar Cell with 40% Target Efficiency Fabricated by Wafer Bonding and Layer Transfer: Final Technical Report, 1 January 2005 - 31 December 2007

H.A. Atwater

California Institute of Technology

Research output: NLR › Subcontract Report

Abstract

We realized high-quality InGaP/GaAs 2-junction top cells on Ge/Si, InGaAs/InP bottom cells, direct-bond series interconnection of tandem cells, and modeling of bonded 3- and 4-junction device performance.

Original language	American English
Publisher	National Renewable Energy Laboratory (NREL)
Number of pages	17
State	Published - 2008

Bibliographical note

Work performed by California Institute of Technology, Pasadena, California

NLR Publication Number

NREL/SR-520-44532

Keywords

bottom cells
devices
direct bond
high quality
INGaAs/INP
InGaP/GaAs
modeling
performance
PV
solar cells
tandem
top cells
two-junction devices

Access to Document

https://www.nrel.gov/docs/fy09osti/44532.pdf

Cite this

@misc{584b69bfd4a0476bbff0fb2842950f64,

title = "Four-Junction Solar Cell with 40\% Target Efficiency Fabricated by Wafer Bonding and Layer Transfer: Final Technical Report, 1 January 2005 - 31 December 2007",

abstract = "We realized high-quality InGaP/GaAs 2-junction top cells on Ge/Si, InGaAs/InP bottom cells, direct-bond series interconnection of tandem cells, and modeling of bonded 3- and 4-junction device performance.",

keywords = "bottom cells, devices, direct bond, high quality, INGaAs/INP, InGaP/GaAs, modeling, performance, PV, solar cells, tandem, top cells, two-junction devices",

author = "H.A. Atwater",

note = "Work performed by California Institute of Technology, Pasadena, California",

year = "2008",

language = "American English",

publisher = "National Renewable Energy Laboratory (NREL)",

address = "United States",

type = "Other",

}

TY - GEN

T1 - Four-Junction Solar Cell with 40% Target Efficiency Fabricated by Wafer Bonding and Layer Transfer: Final Technical Report, 1 January 2005 - 31 December 2007

AU - Atwater, H.A.

N1 - Work performed by California Institute of Technology, Pasadena, California

PY - 2008

Y1 - 2008

N2 - We realized high-quality InGaP/GaAs 2-junction top cells on Ge/Si, InGaAs/InP bottom cells, direct-bond series interconnection of tandem cells, and modeling of bonded 3- and 4-junction device performance.

AB - We realized high-quality InGaP/GaAs 2-junction top cells on Ge/Si, InGaAs/InP bottom cells, direct-bond series interconnection of tandem cells, and modeling of bonded 3- and 4-junction device performance.

KW - bottom cells

KW - devices

KW - direct bond

KW - high quality

KW - INGaAs/INP

KW - InGaP/GaAs

KW - modeling

KW - performance

KW - PV

KW - solar cells

KW - tandem

KW - top cells

KW - two-junction devices

M3 - Subcontract Report

PB - National Renewable Energy Laboratory (NREL)

ER -

Four-Junction Solar Cell with 40% Target Efficiency Fabricated by Wafer Bonding and Layer Transfer: Final Technical Report, 1 January 2005 - 31 December 2007

Abstract

Bibliographical note

NLR Publication Number

Keywords

Access to Document

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Cite this