Fourier Transform Luminescence Spectroscopy of Semiconductor Thin Films and Devices

Research output: Contribution to conferencePaper

Abstract

We have been successful in adapting Fourier transform (FT) Raman accessories and spectrophotometers for sensitive measurements of the photoluminescence (PL) spectra of photovoltaic materials and devices. In many cases, the sensitivity of the FT technique allows rapid room-temperature measurements of weak luminescence spectra that cannot be observed using dispersive PL spectrophotometers. Wepresent here the results of a number of studies of material and device quality obtained using FT-luminescence spectroscopy, including insights into bandgap variations, defect and impurity effects, and relative recombination rates. We also describe our approach to extending the range of the FT-Raman spectrophotometer to cover the region from 11,500 to 3700 cm-1, enabling FT-luminescencemeasurements to be made from 1.42 to 0.46 eV, and our investigation of FT-PL microspectroscopy.
Original languageAmerican English
Number of pages16
StatePublished - 1998
Event3rd International Symposium on Advanced Infrared and Raman Spectroscopy (AIRS III) - Vienna, Austria
Duration: 5 Jul 19989 Jul 1998

Conference

Conference3rd International Symposium on Advanced Infrared and Raman Spectroscopy (AIRS III)
CityVienna, Austria
Period5/07/989/07/98

Bibliographical note

Accepted for publication in Vibrational Spectroscopy.

NREL Publication Number

  • NREL/CP-520-25037

Fingerprint

Dive into the research topics of 'Fourier Transform Luminescence Spectroscopy of Semiconductor Thin Films and Devices'. Together they form a unique fingerprint.

Cite this