Fourier Transform Luminescence Spectroscopy of Semiconductor Thin Films and Devices

Fourier Transform Luminescence Spectroscopy of Semiconductor Thin Films and Devices

Research output: Contribution to conference › Paper

Abstract

We have been successful in adapting Fourier transform (FT) Raman accessories and spectrophotometers for sensitive measurements of the photoluminescence (PL) spectra of photovoltaic materials and devices. In many cases, the sensitivity of the FT technique allows rapid room-temperature measurements of weak luminescence spectra that cannot be observed using dispersive PL spectrophotometers. Wepresent here the results of a number of studies of material and device quality obtained using FT-luminescence spectroscopy, including insights into bandgap variations, defect and impurity effects, and relative recombination rates. We also describe our approach to extending the range of the FT-Raman spectrophotometer to cover the region from 11,500 to 3700 cm-1, enabling FT-luminescencemeasurements to be made from 1.42 to 0.46 eV, and our investigation of FT-PL microspectroscopy.

Original language	American English
Number of pages	16
State	Published - 1998
Event	3rd International Symposium on Advanced Infrared and Raman Spectroscopy (AIRS III) - Vienna, Austria Duration: 5 Jul 1998 → 9 Jul 1998

Conference

Conference	3rd International Symposium on Advanced Infrared and Raman Spectroscopy (AIRS III)
City	Vienna, Austria
Period	5/07/98 → 9/07/98

Bibliographical note

Accepted for publication in Vibrational Spectroscopy.

NREL Publication Number

NREL/CP-520-25037

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

https://www.nrel.gov/docs/fy99osti/25037.pdf

Cite this

@conference{9a29418d8c76450b87da078dccdebe5b,

title = "Fourier Transform Luminescence Spectroscopy of Semiconductor Thin Films and Devices",

abstract = "We have been successful in adapting Fourier transform (FT) Raman accessories and spectrophotometers for sensitive measurements of the photoluminescence (PL) spectra of photovoltaic materials and devices. In many cases, the sensitivity of the FT technique allows rapid room-temperature measurements of weak luminescence spectra that cannot be observed using dispersive PL spectrophotometers. Wepresent here the results of a number of studies of material and device quality obtained using FT-luminescence spectroscopy, including insights into bandgap variations, defect and impurity effects, and relative recombination rates. We also describe our approach to extending the range of the FT-Raman spectrophotometer to cover the region from 11,500 to 3700 cm-1, enabling FT-luminescencemeasurements to be made from 1.42 to 0.46 eV, and our investigation of FT-PL microspectroscopy.",

author = "NREL",

note = "Accepted for publication in Vibrational Spectroscopy.; 3rd International Symposium on Advanced Infrared and Raman Spectroscopy (AIRS III) ; Conference date: 05-07-1998 Through 09-07-1998",

year = "1998",

language = "American English",

}

TY - CONF

T1 - Fourier Transform Luminescence Spectroscopy of Semiconductor Thin Films and Devices

AU - NREL, null

N1 - Accepted for publication in Vibrational Spectroscopy.

PY - 1998

Y1 - 1998

N2 - We have been successful in adapting Fourier transform (FT) Raman accessories and spectrophotometers for sensitive measurements of the photoluminescence (PL) spectra of photovoltaic materials and devices. In many cases, the sensitivity of the FT technique allows rapid room-temperature measurements of weak luminescence spectra that cannot be observed using dispersive PL spectrophotometers. Wepresent here the results of a number of studies of material and device quality obtained using FT-luminescence spectroscopy, including insights into bandgap variations, defect and impurity effects, and relative recombination rates. We also describe our approach to extending the range of the FT-Raman spectrophotometer to cover the region from 11,500 to 3700 cm-1, enabling FT-luminescencemeasurements to be made from 1.42 to 0.46 eV, and our investigation of FT-PL microspectroscopy.

AB - We have been successful in adapting Fourier transform (FT) Raman accessories and spectrophotometers for sensitive measurements of the photoluminescence (PL) spectra of photovoltaic materials and devices. In many cases, the sensitivity of the FT technique allows rapid room-temperature measurements of weak luminescence spectra that cannot be observed using dispersive PL spectrophotometers. Wepresent here the results of a number of studies of material and device quality obtained using FT-luminescence spectroscopy, including insights into bandgap variations, defect and impurity effects, and relative recombination rates. We also describe our approach to extending the range of the FT-Raman spectrophotometer to cover the region from 11,500 to 3700 cm-1, enabling FT-luminescencemeasurements to be made from 1.42 to 0.46 eV, and our investigation of FT-PL microspectroscopy.

M3 - Paper

T2 - 3rd International Symposium on Advanced Infrared and Raman Spectroscopy (AIRS III)

Y2 - 5 July 1998 through 9 July 1998

ER -

Fourier Transform Luminescence Spectroscopy of Semiconductor Thin Films and Devices

Abstract

Conference

Bibliographical note

NREL Publication Number

UN SDGs

Access to Document

Fingerprint

Cite this