Front Contact Optimization for Cu(In,Ga)Se2 (Sub)Modules

doi:10.1109/PVSC.1996.564270

Front Contact Optimization for Cu(In,Ga)Se2 (Sub)Modules

Research output: Contribution to conference › Paper

Abstract

The impact of front contact window optimization on module design for different absorber bandgaps is examined, wider bandgaps being simultaneously less demanding of the ZnO IR transparency as well as its sheet conductivity. Based on small area device measurements, examples are given demonstrating the need and deposition method of the high resistive ZnO buffer layer as a function of the CdS bufferlayer thickness. Questions concerning the validity of using doped ZnO characteristics of films deposited on glass are addressed. It is shown that the doped ZnO in devices can be potentially quite different from that on glass, some of this difference is tracked to the CdS. This should be accounted for when used in module prediction models.

Original language	American English
Pages	885-888
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.1996.564270
State	Published - 1996
Event	Twenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C. Duration: 13 May 1996 → 17 May 1996

Conference

Conference	Twenty Fifth IEEE Photovoltaic Specialists Conference
City	Washington, D.C.
Period	13/05/96 → 17/05/96

Bibliographical note

Work performed by Solarex, Newtown, Pennsylvania

NREL Publication Number

NREL/CP-22418

Access to Document

10.1109/PVSC.1996.564270

Cite this

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title = "Front Contact Optimization for Cu(In,Ga)Se2 (Sub)Modules",

abstract = "The impact of front contact window optimization on module design for different absorber bandgaps is examined, wider bandgaps being simultaneously less demanding of the ZnO IR transparency as well as its sheet conductivity. Based on small area device measurements, examples are given demonstrating the need and deposition method of the high resistive ZnO buffer layer as a function of the CdS bufferlayer thickness. Questions concerning the validity of using doped ZnO characteristics of films deposited on glass are addressed. It is shown that the doped ZnO in devices can be potentially quite different from that on glass, some of this difference is tracked to the CdS. This should be accounted for when used in module prediction models.",

author = "NREL",

note = "Work performed by Solarex, Newtown, Pennsylvania; Twenty Fifth IEEE Photovoltaic Specialists Conference ; Conference date: 13-05-1996 Through 17-05-1996",

year = "1996",

doi = "10.1109/PVSC.1996.564270",

language = "American English",

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N1 - Work performed by Solarex, Newtown, Pennsylvania

PY - 1996

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N2 - The impact of front contact window optimization on module design for different absorber bandgaps is examined, wider bandgaps being simultaneously less demanding of the ZnO IR transparency as well as its sheet conductivity. Based on small area device measurements, examples are given demonstrating the need and deposition method of the high resistive ZnO buffer layer as a function of the CdS bufferlayer thickness. Questions concerning the validity of using doped ZnO characteristics of films deposited on glass are addressed. It is shown that the doped ZnO in devices can be potentially quite different from that on glass, some of this difference is tracked to the CdS. This should be accounted for when used in module prediction models.

AB - The impact of front contact window optimization on module design for different absorber bandgaps is examined, wider bandgaps being simultaneously less demanding of the ZnO IR transparency as well as its sheet conductivity. Based on small area device measurements, examples are given demonstrating the need and deposition method of the high resistive ZnO buffer layer as a function of the CdS bufferlayer thickness. Questions concerning the validity of using doped ZnO characteristics of films deposited on glass are addressed. It is shown that the doped ZnO in devices can be potentially quite different from that on glass, some of this difference is tracked to the CdS. This should be accounted for when used in module prediction models.

U2 - 10.1109/PVSC.1996.564270

DO - 10.1109/PVSC.1996.564270

M3 - Paper

SP - 885

EP - 888

T2 - Twenty Fifth IEEE Photovoltaic Specialists Conference

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ER -

Front Contact Optimization for Cu(In,Ga)Se2 (Sub)Modules

Abstract

Conference

Bibliographical note

NREL Publication Number

Access to Document

Fingerprint

Cite this