Front Contact Optimization for Cu(In,Ga)Se2 (Sub)Modules

    Research output: Contribution to conferencePaper


    The impact of front contact window optimization on module design for different absorber bandgaps is examined, wider bandgaps being simultaneously less demanding of the ZnO IR transparency as well as its sheet conductivity. Based on small area device measurements, examples are given demonstrating the need and deposition method of the high resistive ZnO buffer layer as a function of the CdS bufferlayer thickness. Questions concerning the validity of using doped ZnO characteristics of films deposited on glass are addressed. It is shown that the doped ZnO in devices can be potentially quite different from that on glass, some of this difference is tracked to the CdS. This should be accounted for when used in module prediction models.
    Original languageAmerican English
    Number of pages4
    StatePublished - 1996
    EventTwenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C.
    Duration: 13 May 199617 May 1996


    ConferenceTwenty Fifth IEEE Photovoltaic Specialists Conference
    CityWashington, D.C.

    Bibliographical note

    Work performed by Solarex, Newtown, Pennsylvania

    NREL Publication Number

    • NREL/CP-22418


    Dive into the research topics of 'Front Contact Optimization for Cu(In,Ga)Se2 (Sub)Modules'. Together they form a unique fingerprint.

    Cite this