Front/Back Poly-Si/SiO2 Passivated Contact Device with Voc > 720 mV

David Young, Vincenzo LaSalvia, William Nemeth, San Theingi, Abhijit Kale, Dawn Findley, Scott Atkins, Matthew Page, Pauls Stradins

Research output: Contribution to conferencePaper

Abstract

We report on front/back poly-Si/SiO2 passivated contact solar cells with iVoc > 735 mV and Voc > 720 mV. The devices were grown on n-Cz wafers using PECVD to deposit doped a-Si layers which were then annealed at 850 degrees C. Our best device has an efficiency of 21% which is limited by: (1) low current density from a large grid shadow loss and parasitic absorption in the front poly-Si:P layer; and (2) high series resistance from a high Al-poly-Si:P contact resistivity. We discuss the role of high temperature anneals throughout the process flow to preserve and improve the bulk lifetime of the n-Cz wafers.
Original languageAmerican English
Pages700-703
Number of pages4
DOIs
StatePublished - 2018
Event35th European Photovoltaic Solar Energy Conference and Exhibition - Brussels, Belgium
Duration: 24 Sep 201827 Sep 2018

Conference

Conference35th European Photovoltaic Solar Energy Conference and Exhibition
CityBrussels, Belgium
Period24/09/1827/09/18

NREL Publication Number

  • NREL/CP-5900-72446

Keywords

  • passivate contacts
  • solar cells
  • Tabula Rasa

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