Abstract
We report on front/back poly-Si/SiO2 passivated contact solar cells with iVoc > 735 mV and Voc > 720 mV. The devices were grown on n-Cz wafers using PECVD to deposit doped a-Si layers which were then annealed at 850 degrees C. Our best device has an efficiency of 21% which is limited by: (1) low current density from a large grid shadow loss and parasitic absorption in the front poly-Si:P layer; and (2) high series resistance from a high Al-poly-Si:P contact resistivity. We discuss the role of high temperature anneals throughout the process flow to preserve and improve the bulk lifetime of the n-Cz wafers.
Original language | American English |
---|---|
Pages | 700-703 |
Number of pages | 4 |
DOIs | |
State | Published - 2018 |
Event | 35th European Photovoltaic Solar Energy Conference and Exhibition - Brussels, Belgium Duration: 24 Sep 2018 → 27 Sep 2018 |
Conference
Conference | 35th European Photovoltaic Solar Energy Conference and Exhibition |
---|---|
City | Brussels, Belgium |
Period | 24/09/18 → 27/09/18 |
NREL Publication Number
- NREL/CP-5900-72446
Keywords
- passivate contacts
- solar cells
- Tabula Rasa