Abstract
Impurities in cadmium sulfide (CdS) films are a concern in the fabrication of copper (indium, gallium) diselenide (CIGS) and cadmium telluride (CdTe) photovoltaic devices. Films of CdS grown using chemical bath deposition (CBD) generally yield better devices than purer CdS films grown using vacuum deposition techniques, despite the higher impurity concentrations typically observed in the CBD CdSfilms. In this work, we present Fourier transform infrared (FTIR), Auger, electron microprobe (EPMA), X-ray photoelectron spectroscopic (XPS), and secondary ion mass spectroscopic (SIMS) analyses of the impurities in CBD CdS films, and show that these differ as a function of substrate type and film deposition conditions. We also show that some of these impurities exist as 102 micron-scaleprecipitates.
Original language | American English |
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Number of pages | 5 |
State | Published - 1997 |
Event | 26th IEEE Photovoltaic Specialists Conference - Anaheim, California Duration: 29 Sep 1997 → 3 Oct 1997 |
Conference
Conference | 26th IEEE Photovoltaic Specialists Conference |
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City | Anaheim, California |
Period | 29/09/97 → 3/10/97 |
Bibliographical note
Available electronically onlyNREL Publication Number
- NREL/CP-530-22966
Keywords
- cadmium sulfide solar cells films
- cadmium telluride (CdTe) photovoltaic solar cells modules
- CdS films
- copper diselenide
- photovoltaic
- solar