Full Field Birefringence Measurement of Grown-In Stresses in Thin Silicon Sheet: Final Technical Report, 2 January 2002 - 15 January 2008

Research output: NRELSubcontract Report

Abstract

This paper summarizes polariscopy work that led to prototype non-contact, near-infrared light-transmission system for inspecting thin, flat, large-area Si wafers. Acoustic work led to commercially viable system to inspect wafers for microcracks.
Original languageAmerican English
Number of pages27
StatePublished - 2008

Bibliographical note

Work performed by Georgia Institute of Technology, Atlanta, Georgia and University of South Florida, Tampa, Florida

NREL Publication Number

  • NREL/SR-520-44237

Keywords

  • crack detection
  • full-field birefringence
  • infrared photoelasticity
  • PV
  • residual stress
  • resonance ultrasonic vibration
  • silicon sheets
  • silicon wafers

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