Full Field Birefringence Measurement of Grown-In Stresses in Thin Silicon Sheet: Final Technical Report, 2 January 2002 - 15 January 2008

Full Field Birefringence Measurement of Grown-In Stresses in Thin Silicon Sheet: Final Technical Report, 2 January 2002 - 15 January 2008

Research output: NREL › Subcontract Report

Abstract

This paper summarizes polariscopy work that led to prototype non-contact, near-infrared light-transmission system for inspecting thin, flat, large-area Si wafers. Acoustic work led to commercially viable system to inspect wafers for microcracks.

Original language	American English
Number of pages	27
State	Published - 2008

Bibliographical note

Work performed by Georgia Institute of Technology, Atlanta, Georgia and University of South Florida, Tampa, Florida

NREL Publication Number

NREL/SR-520-44237

Keywords

crack detection
full-field birefringence
infrared photoelasticity
PV
residual stress
resonance ultrasonic vibration
silicon sheets
silicon wafers

Access to Document

https://www.nrel.gov/docs/fy09osti/44237.pdf

Cite this

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title = "Full Field Birefringence Measurement of Grown-In Stresses in Thin Silicon Sheet: Final Technical Report, 2 January 2002 - 15 January 2008",

abstract = "This paper summarizes polariscopy work that led to prototype non-contact, near-infrared light-transmission system for inspecting thin, flat, large-area Si wafers. Acoustic work led to commercially viable system to inspect wafers for microcracks.",

keywords = "crack detection, full-field birefringence, infrared photoelasticity, PV, residual stress, resonance ultrasonic vibration, silicon sheets, silicon wafers",

author = "NREL",

note = "Work performed by Georgia Institute of Technology, Atlanta, Georgia and University of South Florida, Tampa, Florida",

year = "2008",

language = "American English",

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T1 - Full Field Birefringence Measurement of Grown-In Stresses in Thin Silicon Sheet: Final Technical Report, 2 January 2002 - 15 January 2008

AU - NREL, null

N1 - Work performed by Georgia Institute of Technology, Atlanta, Georgia and University of South Florida, Tampa, Florida

PY - 2008

Y1 - 2008

N2 - This paper summarizes polariscopy work that led to prototype non-contact, near-infrared light-transmission system for inspecting thin, flat, large-area Si wafers. Acoustic work led to commercially viable system to inspect wafers for microcracks.

AB - This paper summarizes polariscopy work that led to prototype non-contact, near-infrared light-transmission system for inspecting thin, flat, large-area Si wafers. Acoustic work led to commercially viable system to inspect wafers for microcracks.

KW - crack detection

KW - full-field birefringence

KW - infrared photoelasticity

KW - PV

KW - residual stress

KW - resonance ultrasonic vibration

KW - silicon sheets

KW - silicon wafers

M3 - Subcontract Report

ER -

Full Field Birefringence Measurement of Grown-In Stresses in Thin Silicon Sheet: Final Technical Report, 2 January 2002 - 15 January 2008

Abstract

Bibliographical note

NREL Publication Number

Keywords

Access to Document

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Cite this