Abstract
This report summarizes the progress made by Georgia Tech in the 2002-2006 period toward high-efficiency, low-cost crystalline silicon solar cells. This program emphasize fundamental and applied research on commercial substrates and manufacturable technologies. A combination of material characterization, device modeling, technology development, and complete cell fabrication were used to accomplishthe goals of this program. This report is divided into five sections that summarize our work on i) PECVD SiN-induced defect passivation (Sections 1 and 2); ii) the effect of material inhomogeneity on the performance of mc-Si solar cells (Section 3); iii) a comparison of light-induced degradation in commercially grown Ga- and B-doped Czochralski Si ingots (Section 4); and iv) the understanding ofthe formation of high-quality thick-film Ag contacts on high sheet-resistance emitters (Section 5).
Original language | American English |
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Number of pages | 79 |
State | Published - 2007 |
Bibliographical note
Work performed by Georgia Institute of Technology, Atlanta, GeorgiaNREL Publication Number
- NREL/SR-520-42324
Keywords
- Ag contacts
- characterizations
- crystalline
- defect passivation
- device modeling
- high efficiency
- light-induced degradation
- low cost
- PV
- research and development (R&D)
- silicon
- solar cells