Abstract
The directions and goals for future research in crystalline silicon materials for high-efficiency solar cells are identified. Currently, the substrates produced by technologies of commercial interest have lower chemical purity and crystal perfection than those of microelectronics-grade wafers. The material quality of these substrates can be improved by post-growth treatments that can be incorporated in the cell fabrication process schedule. Such treatments, applicable to low-cost single- and polycrystalline substrates, include impurity gettering, defect passivation, and defect annihilation. Development of these processes requires a better understanding of point-defect phenomena involving interactions of defects and impurities.
Original language | American English |
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Pages | 973-975 |
Number of pages | 3 |
DOIs | |
State | Published - 1992 |
Externally published | Yes |
Event | Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991 - Las Vegas, NV, USA Duration: 7 Oct 1991 → 11 Oct 1991 |
Conference
Conference | Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991 |
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City | Las Vegas, NV, USA |
Period | 7/10/91 → 11/10/91 |
NREL Publication Number
- SERI/CP-214-4565