Fundamentals of Defect-Free III-V Growth on Oxide-Nanopatterned GaAs Substrates

Research output: NRELPresentation


This talk describes the fundamentals underlying defect-free growth of large-area III-V devices on oxide-nanopatterned GaAs substrates, and applies them to the growth of 24.8% efficient GaAs solar cells with a dislocation density less than 5 x 10^5 cm^-2. In this application the nanopatterned oxide layer serves as a mechanically-weak layer for substrate separation and reuse, but in other applications it could serve as an optical element to diffract or redirect light. This presentation focuses on how the topology and dimensions of the oxide mask must be controlled to avoid defect formation wherever the epilayer coalesces over a mask feature.
Original languageAmerican English
Number of pages30
StatePublished - 2022

Publication series

NamePresented at the SPIE Optics and Photonics Conference, 21-25 August 2022, San Diego, California

NREL Publication Number

  • NREL/PR-5900-82733


  • GaAs
  • III-V
  • oxide nanopatterned
  • PV
  • substrate reuse
  • substrate separation


Dive into the research topics of 'Fundamentals of Defect-Free III-V Growth on Oxide-Nanopatterned GaAs Substrates'. Together they form a unique fingerprint.

Cite this