Ga2O3 Packaging and Thermal Management Challenges and Opportunities

Gilberto Moreno, Kevin Bennion, Bidzina Kekelia, Ramchandra Kotecha, Barry Mather, Sreekant Narumanchi, Paul Paret, Marshall Tellekamp, Andriy Zakutayev, Samuel Graham, Samuel Kim

Research output: NRELPresentation


This project addresses the early-stage research and development to design and build packages that enable practical utilization of Ga2O3 semiconductor devices in power electronic circuits. The project will encompass electrical, thermal, thermomechanical and reliability aspects in the package design. As compared to silicon (Si), SiC or GaN-based packaging, using a Ga2O3 device will require significant research and innovations in the attachment of the oxide device to substrates, attachment of the substrate to the baseplate/heat exchanger, appropriate electrical interconnections, as well as the type and location of the thermal management solutions. A thorough understanding and characterization of the thermal transport properties of the Ga2O3 device layer is also essential to understand and quantify the package performance. Addressing all these aspects will result in a high-performance, low-cost and reliable package.
Original languageAmerican English
Number of pages19
StatePublished - 2019

Publication series

NamePresented at the Third Ultrawide-Bandgap Workshop, 14-16 May 2019, Adelphi, Maryland

NREL Publication Number

  • NREL/PR-5400-73902


  • Ga2O3
  • gallium oxide
  • heat exchanger
  • high performance
  • low cost
  • semiconductor devices
  • thermal management
  • ultra-wide bandgap


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