GaAs Films Grown by Vacuum Chemical Epitaxy Using Thermally Precracked Trimethyl-Arsenic

Research output: Contribution to journal › Article

Work performed by Chevron Research Company, Richmond, California

NREL Publication Number

@article{1712f11da1a84fd395be76ef89e20d46,

title = "GaAs Films Grown by Vacuum Chemical Epitaxy Using Thermally Precracked Trimethyl-Arsenic",

author = "NREL",

note = "Work performed by Chevron Research Company, Richmond, California",

year = "1987",

doi = "10.1063/1.339145",

language = "American English",

volume = "62",

pages = "299--301",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - GaAs Films Grown by Vacuum Chemical Epitaxy Using Thermally Precracked Trimethyl-Arsenic

AU - NREL, null

N1 - Work performed by Chevron Research Company, Richmond, California

PY - 1987

Y1 - 1987

U2 - 10.1063/1.339145

DO - 10.1063/1.339145

M3 - Article

SN - 0021-8979

VL - 62

SP - 299

EP - 301

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

ER -