GaAs Solar Cell Grown by Dynamic Hydride Vapor Phase Epitaxy Using Nitrogen Carrier Gas

Elisabeth McClure; John Simon; Kevin Schulte; Wondwosen Metaferia; Aaron Ptak

doi:10.1109/PVSC45281.2020.9300597

GaAs Solar Cell Grown by Dynamic Hydride Vapor Phase Epitaxy Using Nitrogen Carrier Gas

Elisabeth McClure, John Simon, Kevin Schulte, Wondwosen Metaferia, Aaron Ptak

Chemistry and Nanoscience

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

Abstract

We present a single-junction GaAs solar cell grown by dynamic hydride vapor phase epitaxy using nitrogen carrier gas at a growth rate of 30\ \mu\mathrm{m}/\mathrm{h}. The VOC of 1.05 V is comparable to the VOC of solar cells grown in our reactor with a hydrogen carrier, indicating that high material quality can be obtained with a nitrogen carrier.

Original language	American English
Pages	2456-2457
Number of pages	2
DOIs	https://doi.org/10.1109/PVSC45281.2020.9300597 https://doi.org/10.1109/PVSC45281.2020.9300597
State	Published - 14 Jun 2020
Event	47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada Duration: 15 Jun 2020 → 21 Aug 2020

Conference

Conference	47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Country/Territory	Canada
City	Calgary
Period	15/06/20 → 21/08/20

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

NREL Publication Number

NREL/CP-5900-79364

Keywords

GaAs
HVPE
nitrogen carrier gas
photovoltaics

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title = "GaAs Solar Cell Grown by Dynamic Hydride Vapor Phase Epitaxy Using Nitrogen Carrier Gas",

abstract = "We present a single-junction GaAs solar cell grown by dynamic hydride vapor phase epitaxy using nitrogen carrier gas at a growth rate of 30\ \mu\mathrm{m}/\mathrm{h}. The VOC of 1.05 V is comparable to the VOC of solar cells grown in our reactor with a hydrogen carrier, indicating that high material quality can be obtained with a nitrogen carrier.",

keywords = "GaAs, HVPE, nitrogen carrier gas, photovoltaics",

author = "Elisabeth McClure and John Simon and Kevin Schulte and Wondwosen Metaferia and Aaron Ptak",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 ; Conference date: 15-06-2020 Through 21-08-2020",

year = "2020",

month = jun,

day = "14",

doi = "10.1109/PVSC45281.2020.9300597",

language = "American English",

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McClure, E, Simon, J , Schulte, K, Metaferia, W & Ptak, A 2020, 'GaAs Solar Cell Grown by Dynamic Hydride Vapor Phase Epitaxy Using Nitrogen Carrier Gas', Paper presented at 47th IEEE Photovoltaic Specialists Conference, PVSC 2020, Calgary, Canada, 15/06/20 - 21/08/20 pp. 2456-2457. https://doi.org/10.1109/PVSC45281.2020.9300597, https://doi.org/10.1109/PVSC45281.2020.9300597

TY - CONF

T1 - GaAs Solar Cell Grown by Dynamic Hydride Vapor Phase Epitaxy Using Nitrogen Carrier Gas

AU - McClure, Elisabeth

AU - Simon, John

AU - Schulte, Kevin

AU - Metaferia, Wondwosen

AU - Ptak, Aaron

PY - 2020/6/14

Y1 - 2020/6/14

N2 - We present a single-junction GaAs solar cell grown by dynamic hydride vapor phase epitaxy using nitrogen carrier gas at a growth rate of 30\ \mu\mathrm{m}/\mathrm{h}. The VOC of 1.05 V is comparable to the VOC of solar cells grown in our reactor with a hydrogen carrier, indicating that high material quality can be obtained with a nitrogen carrier.

AB - We present a single-junction GaAs solar cell grown by dynamic hydride vapor phase epitaxy using nitrogen carrier gas at a growth rate of 30\ \mu\mathrm{m}/\mathrm{h}. The VOC of 1.05 V is comparable to the VOC of solar cells grown in our reactor with a hydrogen carrier, indicating that high material quality can be obtained with a nitrogen carrier.

KW - GaAs

KW - HVPE

KW - nitrogen carrier gas

KW - photovoltaics

UR - http://www.scopus.com/inward/record.url?scp=85099600521&partnerID=8YFLogxK

U2 - 10.1109/PVSC45281.2020.9300597

DO - 10.1109/PVSC45281.2020.9300597

M3 - Paper

AN - SCOPUS:85099600521

SP - 2456

EP - 2457

T2 - 47th IEEE Photovoltaic Specialists Conference, PVSC 2020

Y2 - 15 June 2020 through 21 August 2020

ER -

GaAs Solar Cell Grown by Dynamic Hydride Vapor Phase Epitaxy Using Nitrogen Carrier Gas

Abstract

Conference

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Keywords

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