GaAs Solar Cells Grown on Intentionally-Contaminated GaAs Substrates

John Simon, Christiane Frank-Rotsch, Karoline Stolze, Matthew Young, Myles Steiner, Aaron Ptak

Research output: Contribution to conferencePaper

Abstract

III-V solar cells have the best performance of any semiconductor materials, but deposition of these materials relies on high-quality single crystal GaAs wafers for their superior performance. Unfortunately, the cost of these wafers makes these high-efficiency devices only accessible in high-value or niche markets. Here, we explored the effect of growing bulk GaAs crystals with lower purity input materials in order to reduce their cost. We observe that intentional impurities added to the melt before the crystal growth occurs segregate to the top of the boule. Single junction GaAs solar cells grown on wafers made from contaminated boules showed no performance degradation compared to a high-purity control wafer. These results suggest that lower purity Ga and As source materials can be used during crystal growth to reduce the cost of wafers.
Original languageAmerican English
Number of pages2
DOIs
StatePublished - 2021
Event2020 47th IEEE Photovoltaic Specialists Conference (PVSC) - Calgary, Canada
Duration: 15 Jun 202021 Aug 2020

Conference

Conference2020 47th IEEE Photovoltaic Specialists Conference (PVSC)
CityCalgary, Canada
Period15/06/2021/08/20

NREL Publication Number

  • NREL/CP-5900-75907

Keywords

  • GaAs
  • III-V solar cells
  • single-junction

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