GaAs Solar Cells Grown on Unpolished, Spalled Ge Substrates

Alessandro Cavalli; Brett Ley; Steve Johnston; Dana Sulas; John Simon; Kevin L. Schulte; Corinne E. Packard; David L. Young; Aaron J. Ptak

doi:10.1109/PVSC.2018.8548112

GaAs Solar Cells Grown on Unpolished, Spalled Ge Substrates

Alessandro Cavalli, Brett Ley, Steve Johnston, Dana Sulas, John Simon, Kevin L. Schulte, Corinne E. Packard, David L. Young, Aaron J. Ptak

Research output: Contribution to conference › Paper › peer-review

7 Scopus Citations

Abstract

We spalled 2-inch Ge wafers using a Ni stressor layer and grew GaAs solar cells by hydride vapor phase epitaxy on the spalled Ge surface without other surface treatments. The controlled spalling procedure leaves behind arrest lines, which are parallel surface striations, perpendicular to the crack front, caused by the crack propagation repeatedly halting and restarting during the fracture. We show that small arrest lines do not significantly affect device performance, but larger lines act as regions for carrier recombination. We demonstrate a 12.8% efficient single-junction device, without anti-reflection coating, grown on a spalled surface containing arrest lines. The quantum efficiency of this device is similar to devices grown on non-spalled GaAs and Ge substrates.

Original language	American English
Pages	2771-2775
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2018.8548112 https://doi.org/10.1109/PVSC.2018.8548112
State	Published - 26 Nov 2018
Event	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: 10 Jun 2018 → 15 Jun 2018

Conference

Conference	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country/Territory	United States
City	Waikoloa Village
Period	10/06/18 → 15/06/18

Bibliographical note

See NREL/CP-5K00-71591 for preprint

NREL Publication Number

NREL/CP-5900-73680

Keywords

Gallium Arsenide
photovoltaic cells
semiconductor growth
substrates

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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Cavalli, A., Ley, B., Johnston, S., Sulas, D., Simon, J., Schulte, K. L., Packard, C. E., Young, D. L., & Ptak, A. J. (2018). GaAs Solar Cells Grown on Unpolished, Spalled Ge Substrates. 2771-2775. Paper presented at 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States. https://doi.org/10.1109/PVSC.2018.8548112, https://doi.org/10.1109/PVSC.2018.8548112

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title = "GaAs Solar Cells Grown on Unpolished, Spalled Ge Substrates",

abstract = "We spalled 2-inch Ge wafers using a Ni stressor layer and grew GaAs solar cells by hydride vapor phase epitaxy on the spalled Ge surface without other surface treatments. The controlled spalling procedure leaves behind arrest lines, which are parallel surface striations, perpendicular to the crack front, caused by the crack propagation repeatedly halting and restarting during the fracture. We show that small arrest lines do not significantly affect device performance, but larger lines act as regions for carrier recombination. We demonstrate a 12.8% efficient single-junction device, without anti-reflection coating, grown on a spalled surface containing arrest lines. The quantum efficiency of this device is similar to devices grown on non-spalled GaAs and Ge substrates.",

keywords = "Gallium Arsenide, photovoltaic cells, semiconductor growth, substrates",

author = "Alessandro Cavalli and Brett Ley and Steve Johnston and Dana Sulas and John Simon and Schulte, {Kevin L.} and Packard, {Corinne E.} and Young, {David L.} and Ptak, {Aaron J.}",

note = "See NREL/CP-5K00-71591 for preprint; 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 ; Conference date: 10-06-2018 Through 15-06-2018",

year = "2018",

month = nov,

day = "26",

doi = "10.1109/PVSC.2018.8548112",

language = "American English",

pages = "2771--2775",

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Cavalli, A, Ley, B, Johnston, S , Sulas, D , Simon, J , Schulte, KL, Packard, CE, Young, DL & Ptak, AJ 2018, 'GaAs Solar Cells Grown on Unpolished, Spalled Ge Substrates', Paper presented at 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States, 10/06/18 - 15/06/18 pp. 2771-2775. https://doi.org/10.1109/PVSC.2018.8548112, https://doi.org/10.1109/PVSC.2018.8548112

TY - CONF

T1 - GaAs Solar Cells Grown on Unpolished, Spalled Ge Substrates

AU - Cavalli, Alessandro

AU - Ley, Brett

AU - Johnston, Steve

AU - Sulas, Dana

AU - Simon, John

AU - Schulte, Kevin L.

AU - Packard, Corinne E.

AU - Young, David L.

AU - Ptak, Aaron J.

N1 - See NREL/CP-5K00-71591 for preprint

PY - 2018/11/26

Y1 - 2018/11/26

N2 - We spalled 2-inch Ge wafers using a Ni stressor layer and grew GaAs solar cells by hydride vapor phase epitaxy on the spalled Ge surface without other surface treatments. The controlled spalling procedure leaves behind arrest lines, which are parallel surface striations, perpendicular to the crack front, caused by the crack propagation repeatedly halting and restarting during the fracture. We show that small arrest lines do not significantly affect device performance, but larger lines act as regions for carrier recombination. We demonstrate a 12.8% efficient single-junction device, without anti-reflection coating, grown on a spalled surface containing arrest lines. The quantum efficiency of this device is similar to devices grown on non-spalled GaAs and Ge substrates.

AB - We spalled 2-inch Ge wafers using a Ni stressor layer and grew GaAs solar cells by hydride vapor phase epitaxy on the spalled Ge surface without other surface treatments. The controlled spalling procedure leaves behind arrest lines, which are parallel surface striations, perpendicular to the crack front, caused by the crack propagation repeatedly halting and restarting during the fracture. We show that small arrest lines do not significantly affect device performance, but larger lines act as regions for carrier recombination. We demonstrate a 12.8% efficient single-junction device, without anti-reflection coating, grown on a spalled surface containing arrest lines. The quantum efficiency of this device is similar to devices grown on non-spalled GaAs and Ge substrates.

KW - Gallium Arsenide

KW - photovoltaic cells

KW - semiconductor growth

KW - substrates

UR - http://www.scopus.com/inward/record.url?scp=85059903756&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2018.8548112

DO - 10.1109/PVSC.2018.8548112

M3 - Paper

AN - SCOPUS:85059903756

SP - 2771

EP - 2775

T2 - 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018

Y2 - 10 June 2018 through 15 June 2018

ER -

GaAs Solar Cells Grown on Unpolished, Spalled Ge Substrates

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

UN SDGs

Access to Document

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