GaAs Solar Cells on V-Grooved Silicon via Selective Area Growth

Emily Warren; Adele Tamboli; Michelle Vaisman; Qiang Li; Kei Lau

doi:10.1109/PVSC.2017.8366742

GaAs Solar Cells on V-Grooved Silicon via Selective Area Growth

Emily Warren, Adele Tamboli, Michelle Vaisman, Qiang Li, Kei Lau

Research output: Contribution to conference › Paper

Abstract

Interest in integrating III-Vs onto Si has recently resurged as a promising pathway towards high-efficiency, lowcost tandem photovoltaics. Here, we present single-junction GaAs solar cells grown monolithically on on-axis Si (001) substrates using V-grooves, selective area growth, and aspect ratio trapping to mitigate defect formation without the use of expensive, thick graded buffers, along with homoepitaxially grown GaAs solar cell test structures. The GaAs buffer grown directly on Si is free of antiphase domains and exhibits a relatively low TDD of 4 x 107 cm-2, despite the lack of a graded buffer. These demonstration solar cells show promise for further improvements to III-V/Si tandems to enable cost-competitive photovoltaics.

Original language	American English
Pages	578-581
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2017.8366742
State	Published - 2018
Event	2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) - Washington, D.C. Duration: 25 Jun 2017 → 30 Jun 2017

Conference

Conference	2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)
City	Washington, D.C.
Period	25/06/17 → 30/06/17

Bibliographical note

See NREL/CP-5J00-67778 for preprint

NREL Publication Number

NREL/CP-5900-74002

Keywords

GaAs
III-V on Si
III-V semiconductor materials
photovoltaic cell
selective area growth
solar energy

Access to Document

10.1109/PVSC.2017.8366742

Cite this

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title = "GaAs Solar Cells on V-Grooved Silicon via Selective Area Growth",

abstract = "Interest in integrating III-Vs onto Si has recently resurged as a promising pathway towards high-efficiency, lowcost tandem photovoltaics. Here, we present single-junction GaAs solar cells grown monolithically on on-axis Si (001) substrates using V-grooves, selective area growth, and aspect ratio trapping to mitigate defect formation without the use of expensive, thick graded buffers, along with homoepitaxially grown GaAs solar cell test structures. The GaAs buffer grown directly on Si is free of antiphase domains and exhibits a relatively low TDD of 4 x 107 cm-2, despite the lack of a graded buffer. These demonstration solar cells show promise for further improvements to III-V/Si tandems to enable cost-competitive photovoltaics.",

keywords = "GaAs, III-V on Si, III-V semiconductor materials, photovoltaic cell, selective area growth, solar energy",

author = "Emily Warren and Adele Tamboli and Michelle Vaisman and Qiang Li and Kei Lau",

note = "See NREL/CP-5J00-67778 for preprint; 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) ; Conference date: 25-06-2017 Through 30-06-2017",

year = "2018",

doi = "10.1109/PVSC.2017.8366742",

language = "American English",

pages = "578--581",

}

TY - CONF

T1 - GaAs Solar Cells on V-Grooved Silicon via Selective Area Growth

AU - Warren, Emily

AU - Tamboli, Adele

AU - Vaisman, Michelle

AU - Li, Qiang

AU - Lau, Kei

N1 - See NREL/CP-5J00-67778 for preprint

PY - 2018

Y1 - 2018

N2 - Interest in integrating III-Vs onto Si has recently resurged as a promising pathway towards high-efficiency, lowcost tandem photovoltaics. Here, we present single-junction GaAs solar cells grown monolithically on on-axis Si (001) substrates using V-grooves, selective area growth, and aspect ratio trapping to mitigate defect formation without the use of expensive, thick graded buffers, along with homoepitaxially grown GaAs solar cell test structures. The GaAs buffer grown directly on Si is free of antiphase domains and exhibits a relatively low TDD of 4 x 107 cm-2, despite the lack of a graded buffer. These demonstration solar cells show promise for further improvements to III-V/Si tandems to enable cost-competitive photovoltaics.

AB - Interest in integrating III-Vs onto Si has recently resurged as a promising pathway towards high-efficiency, lowcost tandem photovoltaics. Here, we present single-junction GaAs solar cells grown monolithically on on-axis Si (001) substrates using V-grooves, selective area growth, and aspect ratio trapping to mitigate defect formation without the use of expensive, thick graded buffers, along with homoepitaxially grown GaAs solar cell test structures. The GaAs buffer grown directly on Si is free of antiphase domains and exhibits a relatively low TDD of 4 x 107 cm-2, despite the lack of a graded buffer. These demonstration solar cells show promise for further improvements to III-V/Si tandems to enable cost-competitive photovoltaics.

KW - GaAs

KW - III-V on Si

KW - III-V semiconductor materials

KW - photovoltaic cell

KW - selective area growth

KW - solar energy

U2 - 10.1109/PVSC.2017.8366742

DO - 10.1109/PVSC.2017.8366742

M3 - Paper

SP - 578

EP - 581

T2 - 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)

Y2 - 25 June 2017 through 30 June 2017

ER -

GaAs Solar Cells on V-Grooved Silicon via Selective Area Growth

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

Access to Document

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Cite this