GaAs Solar Cells on V-Grooved Silicon via Selective Area Growth: Preprint

Emily Warren, Adele Tamboli, Michelle Vaisman, Qiang Li, Kei Lau

Research output: Contribution to conferencePaper


Interest in integrating III-Vs onto Si has recently resurged as a promising pathway towards high-efficiency, low-cost tandem photovoltaics. Here, we present a single junction GaAs solar cell grown monolithically on polished Si (001) substrates using V-grooves, selective area growth, and aspect ratio trapping to mitigate defect formation without the use of expensive, thick graded buffers. The GaAs is free of antiphase domains and maintains a relatively low TDD of 4x107 cm-2, despite the lack of a graded buffer. This 6.25 percent-efficient demonstration solar cell shows promise for further improvements to III-V/Si tandems to enable cost-competitive photovoltaics.
Original languageAmerican English
Number of pages6
StatePublished - 2017
Event2017 IEEE 44th Photovoltaic Specialists Conference (PVSC) - Washington, D.C.
Duration: 25 Jun 201730 Jun 2017


Conference2017 IEEE 44th Photovoltaic Specialists Conference (PVSC)
CityWashington, D.C.

Bibliographical note

See NREL/CP-5900-74002 for paper as published in IEEE proceedings

NREL Publication Number

  • NREL/CP-5J00-67778


  • GaAs
  • GaAs
  • photovoltaics
  • Si
  • silicon
  • solar cell


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