GaAs Substrate Recycling Using in-situ Deposited NaCl Layers via Molecular Beam Epitaxy

Brelon May, Jae Kim, Aaron Ptak, David Young

Research output: Contribution to conferencePaper

Abstract

This work presents an alternative method to conventional III-V substrate recycling methods via growth of NaCl on nearly-lattice matched GaAs (001) substrates. Reflection high energy electron diffraction and transmission electron microscopy confirm an epitaxial relationship between the NaCl layers and the underlying GaAs. The NaCl fully desorbs from the surface if the sample is heated too much prior to GaAs deposition. The quality of the deposition of GaAs on NaCl ranges from amorphous at low temperature to polycrystalline at intermediate temperatures. Exposure to electron beams during growth results in larger and (001) textured grains. The substrate is separated from the GaAs film in seconds via submersion in water, revealing a substrate surface comparable to the original.
Original languageAmerican English
Number of pages3
DOIs
StatePublished - 2021
Event2020 47th IEEE Photovoltaic Specialists Conference (PVSC) - Calgary, Canada
Duration: 15 Jun 202021 Aug 2020

Conference

Conference2020 47th IEEE Photovoltaic Specialists Conference (PVSC)
CityCalgary, Canada
Period15/06/2021/08/20

NREL Publication Number

  • NREL/CP-5900-79363

Keywords

  • epitaxy
  • liftoff
  • substrates

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