Abstract
We report on a novel semiconductor photoelectrode structure that exhibits a dependence of the photocurrent-voltage characteristics on the concentration of a nonadsorbed, outer-sphere redox acceptor. The structure consists of a thin (30-50 Å) epilayer of GaInP 2 grown on a thick (5000 Å) p-GaAs epilayer. The thin GaInP 2 layer produces very good passivation of the GaAs surface resulting in surface recombination velocities less than 200 cm/s, while at the same time permitting efficient electron transfer, presumably via field-assisted tunneling and/or thermionic emission.
Original language | American English |
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Pages (from-to) | 396-401 |
Number of pages | 6 |
Journal | Applied Surface Science |
Volume | 106 |
DOIs | |
State | Published - Oct 1996 |
NREL Publication Number
- NREL/JA-453-23057
Keywords
- EIADAS