GaAs/GaInP2 Heterojunction for Studying Photoinduced Charge Transfer Processes

Y. Rosenwaks, B. R. Thacker, A. J. Nozik

Research output: Contribution to journalArticlepeer-review

2 Scopus Citations


We report on a novel semiconductor photoelectrode structure that exhibits a dependence of the photocurrent-voltage characteristics on the concentration of a nonadsorbed, outer-sphere redox acceptor. The structure consists of a thin (30-50 Å) epilayer of GaInP 2 grown on a thick (5000 Å) p-GaAs epilayer. The thin GaInP 2 layer produces very good passivation of the GaAs surface resulting in surface recombination velocities less than 200 cm/s, while at the same time permitting efficient electron transfer, presumably via field-assisted tunneling and/or thermionic emission.

Original languageAmerican English
Pages (from-to)396-401
Number of pages6
JournalApplied Surface Science
StatePublished - Oct 1996

NREL Publication Number

  • NREL/JA-453-23057




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