GaAs/GaInP2 Heterojunction for Studying Photoinduced Charge Transfer Processes

Y. Rosenwaks; B. R. Thacker; A. J. Nozik

doi:10.1016/S0169-4332(96)00380-7

GaAs/GaInP2 Heterojunction for Studying Photoinduced Charge Transfer Processes

Y. Rosenwaks
, B. R. Thacker
, A. J. Nozik

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

2 Scopus Citations

Abstract

We report on a novel semiconductor photoelectrode structure that exhibits a dependence of the photocurrent-voltage characteristics on the concentration of a nonadsorbed, outer-sphere redox acceptor. The structure consists of a thin (30-50 Å) epilayer of GaInP ₂ grown on a thick (5000 Å) p-GaAs epilayer. The thin GaInP ₂ layer produces very good passivation of the GaAs surface resulting in surface recombination velocities less than 200 cm/s, while at the same time permitting efficient electron transfer, presumably via field-assisted tunneling and/or thermionic emission.

Original language	American English
Pages (from-to)	396-401
Number of pages	6
Journal	Applied Surface Science
Volume	106
DOIs	https://doi.org/10.1016/S0169-4332(96)00380-7 https://doi.org/10.1016/S0169-4332(96)00380-7
State	Published - Oct 1996

NLR Publication Number

NREL/JA-453-23057

Keywords

EIADAS

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title = "GaAs/GaInP2 Heterojunction for Studying Photoinduced Charge Transfer Processes",

abstract = " We report on a novel semiconductor photoelectrode structure that exhibits a dependence of the photocurrent-voltage characteristics on the concentration of a nonadsorbed, outer-sphere redox acceptor. The structure consists of a thin (30-50 {\AA}) epilayer of GaInP 2 grown on a thick (5000 {\AA}) p-GaAs epilayer. The thin GaInP 2 layer produces very good passivation of the GaAs surface resulting in surface recombination velocities less than 200 cm/s, while at the same time permitting efficient electron transfer, presumably via field-assisted tunneling and/or thermionic emission. ",

keywords = "EIADAS",

author = "Y. Rosenwaks and Thacker, \{B. R.\} and Nozik, \{A. J.\}",

year = "1996",

month = oct,

doi = "10.1016/S0169-4332(96)00380-7",

language = "American English",

volume = "106",

pages = "396--401",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - GaAs/GaInP2 Heterojunction for Studying Photoinduced Charge Transfer Processes

AU - Rosenwaks, Y.

AU - Thacker, B. R.

AU - Nozik, A. J.

PY - 1996/10

Y1 - 1996/10

N2 - We report on a novel semiconductor photoelectrode structure that exhibits a dependence of the photocurrent-voltage characteristics on the concentration of a nonadsorbed, outer-sphere redox acceptor. The structure consists of a thin (30-50 Å) epilayer of GaInP 2 grown on a thick (5000 Å) p-GaAs epilayer. The thin GaInP 2 layer produces very good passivation of the GaAs surface resulting in surface recombination velocities less than 200 cm/s, while at the same time permitting efficient electron transfer, presumably via field-assisted tunneling and/or thermionic emission.

AB - We report on a novel semiconductor photoelectrode structure that exhibits a dependence of the photocurrent-voltage characteristics on the concentration of a nonadsorbed, outer-sphere redox acceptor. The structure consists of a thin (30-50 Å) epilayer of GaInP 2 grown on a thick (5000 Å) p-GaAs epilayer. The thin GaInP 2 layer produces very good passivation of the GaAs surface resulting in surface recombination velocities less than 200 cm/s, while at the same time permitting efficient electron transfer, presumably via field-assisted tunneling and/or thermionic emission.

KW - EIADAS

UR - https://www.scopus.com/pages/publications/0030565771

U2 - 10.1016/S0169-4332(96)00380-7

DO - 10.1016/S0169-4332(96)00380-7

M3 - Article

AN - SCOPUS:0030565771

SN - 0169-4332

VL - 106

SP - 396

EP - 401

JO - Applied Surface Science

JF - Applied Surface Science

ER -

GaAs/GaInP2 Heterojunction for Studying Photoinduced Charge Transfer Processes

Abstract

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