GaInNAsSb Solar Cells Grown by Molecular Beam Epitaxy

David Jackrel, Aaron Ptak, Seth Bank, Homan Yuen, Mark Wistey, Daniel Friedman, Sarah Kurtz, James S. Harris

Research output: Contribution to conferencePaperpeer-review

9 Scopus Citations


The first GaInNAsSb solar cells are reported. The dilute nitride antimonide material, grown by molecular beam epitaxy, has a bandgap of 0.92 eV and maintains excellent carrier collection efficiency. Internal quantum efficiency of nearly 80% at maximum is obtained in the narrow bandgap GaInNAsSb cells. The short-circuit current density produced by the GaInNAsSb cells underneath a GaAs sub-cell in a multijunction stack, determined from the overlap of the quantum efficiency and the low-AOD spectrum, is 14.8 mA/cm2. This is sufficient to current match the GaInNAsSb sub-cell to the other sub-cells in a GaInP/GaAs/GaInNAsSb solar cell. However, the open-circuit voltage and fill factor of the antimonide devices, 0.28 V and 0.61, are somewhat reduced when compared to GaInNAs devices with 1.03 eV bandgaps. The GaInNAsSb devices had wider depletion regions, which improves the collection efficiency but adversely affects the fill-factor and dark current by increasing depletion region recombination.

Original languageAmerican English
Number of pages4
StatePublished - 2006
Event2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States
Duration: 7 May 200612 May 2006


Conference2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Country/TerritoryUnited States
CityWaikoloa, HI

NREL Publication Number

  • NREL/CP-520-39885


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