GaInP2 Overgrowth and Passivation of Colloidal InP Nanocrystals Using Metalorganic Chemical Vapor Deposition

M. C. Hanna; O. I. Mićić; M. J. Seong; S. P. Ahrenkiel; J. M. Nedeljković; A. J. Nozik

doi:10.1063/1.1644620

GaInP2 Overgrowth and Passivation of Colloidal InP Nanocrystals Using Metalorganic Chemical Vapor Deposition

M. C. Hanna, O. I. Mićić, M. J. Seong, S. P. Ahrenkiel, J. M. Nedeljković, A. J. Nozik

Chemistry and Nanoscience

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Abstract

Thin GaInP ₂ passivating films were deposited on isolated and close-packed arrays of colloidal InP/GaInP ₂ core-shell nanocrystals (NC) using metalorganic chemical vapor deposition (MOCVD). The InP colloidal NCs were coated with 0.5-2.0 nm layer of GaInP ₂ in solution to form core-shell NCs to prevent sintering of NC during the heating process. The NCs were then incorporated into the GaInP ₂ matrix by the MOCVD growth technique. The results show that very strong electronic coupling between dots occurs in the complex composite when the distance between the core-shell NCs was reduced to ≥0.9 nm by using a hexylamine cap.

Original language	American English
Pages (from-to)	780-782
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	5
DOIs	https://doi.org/10.1063/1.1644620 https://doi.org/10.1063/1.1644620
State	Published - 2 Feb 2004

NREL Publication Number

NREL/JA-590-35062

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title = "GaInP2 Overgrowth and Passivation of Colloidal InP Nanocrystals Using Metalorganic Chemical Vapor Deposition",

abstract = "Thin GaInP 2 passivating films were deposited on isolated and close-packed arrays of colloidal InP/GaInP 2 core-shell nanocrystals (NC) using metalorganic chemical vapor deposition (MOCVD). The InP colloidal NCs were coated with 0.5-2.0 nm layer of GaInP 2 in solution to form core-shell NCs to prevent sintering of NC during the heating process. The NCs were then incorporated into the GaInP 2 matrix by the MOCVD growth technique. The results show that very strong electronic coupling between dots occurs in the complex composite when the distance between the core-shell NCs was reduced to ≥0.9 nm by using a hexylamine cap.",

author = "Hanna, {M. C.} and Mi{\'c}i{\'c}, {O. I.} and Seong, {M. J.} and Ahrenkiel, {S. P.} and Nedeljkovi{\'c}, {J. M.} and Nozik, {A. J.}",

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T1 - GaInP2 Overgrowth and Passivation of Colloidal InP Nanocrystals Using Metalorganic Chemical Vapor Deposition

AU - Hanna, M. C.

AU - Mićić, O. I.

AU - Seong, M. J.

AU - Ahrenkiel, S. P.

AU - Nedeljković, J. M.

AU - Nozik, A. J.

PY - 2004/2/2

Y1 - 2004/2/2

N2 - Thin GaInP 2 passivating films were deposited on isolated and close-packed arrays of colloidal InP/GaInP 2 core-shell nanocrystals (NC) using metalorganic chemical vapor deposition (MOCVD). The InP colloidal NCs were coated with 0.5-2.0 nm layer of GaInP 2 in solution to form core-shell NCs to prevent sintering of NC during the heating process. The NCs were then incorporated into the GaInP 2 matrix by the MOCVD growth technique. The results show that very strong electronic coupling between dots occurs in the complex composite when the distance between the core-shell NCs was reduced to ≥0.9 nm by using a hexylamine cap.

AB - Thin GaInP 2 passivating films were deposited on isolated and close-packed arrays of colloidal InP/GaInP 2 core-shell nanocrystals (NC) using metalorganic chemical vapor deposition (MOCVD). The InP colloidal NCs were coated with 0.5-2.0 nm layer of GaInP 2 in solution to form core-shell NCs to prevent sintering of NC during the heating process. The NCs were then incorporated into the GaInP 2 matrix by the MOCVD growth technique. The results show that very strong electronic coupling between dots occurs in the complex composite when the distance between the core-shell NCs was reduced to ≥0.9 nm by using a hexylamine cap.

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DO - 10.1063/1.1644620

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EP - 782

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

GaInP2 Overgrowth and Passivation of Colloidal InP Nanocrystals Using Metalorganic Chemical Vapor Deposition

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