GaInP2 Overgrowth and Passivation of Colloidal InP Nanocrystals Using Metalorganic Chemical Vapor Deposition

M. C. Hanna; O. I. Mićić; M. J. Seong; S. P. Ahrenkiel; J. M. Nedeljković; A. J. Nozik

doi:10.1063/1.1644620

GaInP2 Overgrowth and Passivation of Colloidal InP Nanocrystals Using Metalorganic Chemical Vapor Deposition

M. C. Hanna
, O. I. Mićić
, M. J. Seong
, S. P. Ahrenkiel
, J. M. Nedeljković
, A. J. Nozik

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

15 Scopus Citations

Abstract

Thin GaInP ₂ passivating films were deposited on isolated and close-packed arrays of colloidal InP/GaInP ₂ core-shell nanocrystals (NC) using metalorganic chemical vapor deposition (MOCVD). The InP colloidal NCs were coated with 0.5-2.0 nm layer of GaInP ₂ in solution to form core-shell NCs to prevent sintering of NC during the heating process. The NCs were then incorporated into the GaInP ₂ matrix by the MOCVD growth technique. The results show that very strong electronic coupling between dots occurs in the complex composite when the distance between the core-shell NCs was reduced to ≥0.9 nm by using a hexylamine cap.

Original language	American English
Pages (from-to)	780-782
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	5
DOIs	https://doi.org/10.1063/1.1644620 https://doi.org/10.1063/1.1644620
State	Published - 2 Feb 2004

NLR Publication Number

NREL/JA-590-35062

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title = "GaInP2 Overgrowth and Passivation of Colloidal InP Nanocrystals Using Metalorganic Chemical Vapor Deposition",

abstract = "Thin GaInP 2 passivating films were deposited on isolated and close-packed arrays of colloidal InP/GaInP 2 core-shell nanocrystals (NC) using metalorganic chemical vapor deposition (MOCVD). The InP colloidal NCs were coated with 0.5-2.0 nm layer of GaInP 2 in solution to form core-shell NCs to prevent sintering of NC during the heating process. The NCs were then incorporated into the GaInP 2 matrix by the MOCVD growth technique. The results show that very strong electronic coupling between dots occurs in the complex composite when the distance between the core-shell NCs was reduced to ≥0.9 nm by using a hexylamine cap.",

author = "Hanna, \{M. C.\} and Mi{\'c}i{\'c}, \{O. I.\} and Seong, \{M. J.\} and Ahrenkiel, \{S. P.\} and Nedeljkovi{\'c}, \{J. M.\} and Nozik, \{A. J.\}",

year = "2004",

month = feb,

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doi = "10.1063/1.1644620",

language = "American English",

volume = "84",

pages = "780--782",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - GaInP2 Overgrowth and Passivation of Colloidal InP Nanocrystals Using Metalorganic Chemical Vapor Deposition

AU - Hanna, M. C.

AU - Mićić, O. I.

AU - Seong, M. J.

AU - Ahrenkiel, S. P.

AU - Nedeljković, J. M.

AU - Nozik, A. J.

PY - 2004/2/2

Y1 - 2004/2/2

N2 - Thin GaInP 2 passivating films were deposited on isolated and close-packed arrays of colloidal InP/GaInP 2 core-shell nanocrystals (NC) using metalorganic chemical vapor deposition (MOCVD). The InP colloidal NCs were coated with 0.5-2.0 nm layer of GaInP 2 in solution to form core-shell NCs to prevent sintering of NC during the heating process. The NCs were then incorporated into the GaInP 2 matrix by the MOCVD growth technique. The results show that very strong electronic coupling between dots occurs in the complex composite when the distance between the core-shell NCs was reduced to ≥0.9 nm by using a hexylamine cap.

AB - Thin GaInP 2 passivating films were deposited on isolated and close-packed arrays of colloidal InP/GaInP 2 core-shell nanocrystals (NC) using metalorganic chemical vapor deposition (MOCVD). The InP colloidal NCs were coated with 0.5-2.0 nm layer of GaInP 2 in solution to form core-shell NCs to prevent sintering of NC during the heating process. The NCs were then incorporated into the GaInP 2 matrix by the MOCVD growth technique. The results show that very strong electronic coupling between dots occurs in the complex composite when the distance between the core-shell NCs was reduced to ≥0.9 nm by using a hexylamine cap.

UR - https://www.scopus.com/pages/publications/10744223206

U2 - 10.1063/1.1644620

DO - 10.1063/1.1644620

M3 - Article

AN - SCOPUS:10744223206

SN - 0003-6951

VL - 84

SP - 780

EP - 782

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

GaInP2 Overgrowth and Passivation of Colloidal InP Nanocrystals Using Metalorganic Chemical Vapor Deposition

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