Gallium Content Enhancement in CuIn1-xGaxSe2 Thin Films Prepared by Two-Selenizations Process Using Se Vapor

    Research output: Contribution to conferencePaper

    Abstract

    Gallium content in CuIn/sub 1-x/Ga/sub x/Se/sub 2/ thin films prepared by two-selenizations process using Se vapor has been enhanced by optimizing the metallic layer sequence and selenization parameters. Maintaining a high selenium vapor incidence rate of greater-than-or-equal-to 50 .ANG. s/sup -1/ increased the Ga content x in the formula CuIn/sub 1-x/Ga/sub x/Se/sub 2/ from 0.06 to 0.11. Fasttemperature rise of 50-90 deg. C min /sup -1/ and controlled coolingdown rate to 300 deg. C with a lower Se vapor incidence rate increased the Ga content still further. CuIn/sub 1-x/Ga/sub x/Se/sub 2/ -thin-film solar cell having Ga content of x of 0.18 showed an open-circuit voltage V/sub oc/ of 451.8 mV, a short-circuit current density J/sub sc/ of 34.5 mA, a fill factor of 57.87%, and atotal-area efficiency of 9.02% with a fairly constant spectral response. The results are significant because the process can be easily scaled up for economic manufacture.
    Original languageAmerican English
    Pages897-900
    Number of pages4
    DOIs
    StatePublished - 1996
    EventTwenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C.
    Duration: 13 May 199617 May 1996

    Conference

    ConferenceTwenty Fifth IEEE Photovoltaic Specialists Conference
    CityWashington, D.C.
    Period13/05/9617/05/96

    Bibliographical note

    Work performed by Florida Solar Energy Center, Cocoa, Florida

    NREL Publication Number

    • NREL/CP-22420

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