Gallium-Doped Poly-Si:Ga/SiO2 Passivated Emitters to n-Cz Wafers With iVoc >730 mV

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We form gallium-doped poly-Si:Ga/SiO2 passivated contacts on n-type Czochralski (n-Cz) wafers using ion implantation of Ga and Ga-containing spin-on dopants. After annealing and passivation with Al2O3 , the contacts exhibit iVoc values of >730 mV with corresponding Joe values of < 5 fA/cm2. These are among the best-reported values for p-type poly-Si/SiO2 contacts. Secondary ion mass spectroscopic depth profile data show that, in contrast to B, Ga does not pileup at the SiO2 interface in agreement with its known high diffusivity in SiO2. This lack of Ga pileup may imply fewer dopant-related defects in the SiO2, compared with B dopants, and account for the excellent passivation.

Original languageAmerican English
Article number8049265
Pages (from-to)1640-1645
Number of pages6
JournalIEEE Journal of Photovoltaics
Issue number6
StatePublished - Nov 2017

Bibliographical note

Publisher Copyright:
© 2017 IEEE.

NREL Publication Number

  • NREL/JA-5J00-67872


  • Ga doping
  • ion implantation
  • passivated contacts
  • poly-Si/SiO2 contacts
  • silicon solar cells
  • spin-on dopants


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