Gallium-Doped Poly-Si:Ga/SiO2 Passivated Emitters to n-Cz Wafers With iVoc >730 mV

David Young; William Nemeth; Vincenzo LaSalvia; San Theingi; Matthew Page; Matthew Young; Craig Perkins; Pauls Stradins; Derek Fogel

doi:10.1109/JPHOTOV.2017.2748422

Gallium-Doped Poly-Si:Ga/SiO2 Passivated Emitters to n-Cz Wafers With iVoc >730 mV

David Young, William Nemeth, Vincenzo LaSalvia, San Theingi, Matthew Page, Matthew Young, Craig Perkins, Pauls Stradins, Derek Fogel

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

32 Scopus Citations

Abstract

We form gallium-doped poly-Si:Ga/SiO₂ passivated contacts on n-type Czochralski (n-Cz) wafers using ion implantation of Ga and Ga-containing spin-on dopants. After annealing and passivation with Al₂O₃ , the contacts exhibit iV_oc values of >730 mV with corresponding J_oe values of < 5 fA/cm². These are among the best-reported values for p-type poly-Si/SiO₂ contacts. Secondary ion mass spectroscopic depth profile data show that, in contrast to B, Ga does not pileup at the SiO₂ interface in agreement with its known high diffusivity in SiO₂. This lack of Ga pileup may imply fewer dopant-related defects in the SiO₂, compared with B dopants, and account for the excellent passivation.

Original language	American English
Article number	8049265
Pages (from-to)	1640-1645
Number of pages	6
Journal	IEEE Journal of Photovoltaics
Volume	7
Issue number	6
DOIs	https://doi.org/10.1109/JPHOTOV.2017.2748422 https://doi.org/10.1109/JPHOTOV.2017.2748422
State	Published - Nov 2017

Bibliographical note

Publisher Copyright:
© 2017 IEEE.

NREL Publication Number

NREL/JA-5J00-67872

Keywords

Ga doping
ion implantation
passivated contacts
poly-Si/SiO2 contacts
silicon solar cells
spin-on dopants

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title = "Gallium-Doped Poly-Si:Ga/SiO2 Passivated Emitters to n-Cz Wafers With iVoc >730 mV",

abstract = "We form gallium-doped poly-Si:Ga/SiO2 passivated contacts on n-type Czochralski (n-Cz) wafers using ion implantation of Ga and Ga-containing spin-on dopants. After annealing and passivation with Al2O3 , the contacts exhibit iVoc values of >730 mV with corresponding Joe values of < 5 fA/cm2. These are among the best-reported values for p-type poly-Si/SiO2 contacts. Secondary ion mass spectroscopic depth profile data show that, in contrast to B, Ga does not pileup at the SiO2 interface in agreement with its known high diffusivity in SiO2. This lack of Ga pileup may imply fewer dopant-related defects in the SiO2, compared with B dopants, and account for the excellent passivation.",

keywords = "Ga doping, ion implantation, passivated contacts, poly-Si/SiO2 contacts, silicon solar cells, spin-on dopants",

author = "David Young and William Nemeth and Vincenzo LaSalvia and San Theingi and Matthew Page and Matthew Young and Craig Perkins and Pauls Stradins and Derek Fogel",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.",

year = "2017",

month = nov,

doi = "10.1109/JPHOTOV.2017.2748422",

language = "American English",

volume = "7",

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TY - JOUR

T1 - Gallium-Doped Poly-Si:Ga/SiO2 Passivated Emitters to n-Cz Wafers With iVoc >730 mV

AU - Young, David

AU - Nemeth, William

AU - LaSalvia, Vincenzo

AU - Theingi, San

AU - Page, Matthew

AU - Young, Matthew

AU - Perkins, Craig

AU - Stradins, Pauls

AU - Fogel, Derek

PY - 2017/11

Y1 - 2017/11

N2 - We form gallium-doped poly-Si:Ga/SiO2 passivated contacts on n-type Czochralski (n-Cz) wafers using ion implantation of Ga and Ga-containing spin-on dopants. After annealing and passivation with Al2O3 , the contacts exhibit iVoc values of >730 mV with corresponding Joe values of < 5 fA/cm2. These are among the best-reported values for p-type poly-Si/SiO2 contacts. Secondary ion mass spectroscopic depth profile data show that, in contrast to B, Ga does not pileup at the SiO2 interface in agreement with its known high diffusivity in SiO2. This lack of Ga pileup may imply fewer dopant-related defects in the SiO2, compared with B dopants, and account for the excellent passivation.

AB - We form gallium-doped poly-Si:Ga/SiO2 passivated contacts on n-type Czochralski (n-Cz) wafers using ion implantation of Ga and Ga-containing spin-on dopants. After annealing and passivation with Al2O3 , the contacts exhibit iVoc values of >730 mV with corresponding Joe values of < 5 fA/cm2. These are among the best-reported values for p-type poly-Si/SiO2 contacts. Secondary ion mass spectroscopic depth profile data show that, in contrast to B, Ga does not pileup at the SiO2 interface in agreement with its known high diffusivity in SiO2. This lack of Ga pileup may imply fewer dopant-related defects in the SiO2, compared with B dopants, and account for the excellent passivation.

KW - Ga doping

KW - ion implantation

KW - passivated contacts

KW - poly-Si/SiO2 contacts

KW - silicon solar cells

KW - spin-on dopants

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U2 - 10.1109/JPHOTOV.2017.2748422

DO - 10.1109/JPHOTOV.2017.2748422

M3 - Article

AN - SCOPUS:85030768616

SN - 2156-3381

VL - 7

SP - 1640

EP - 1645

JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

IS - 6

M1 - 8049265

ER -

Gallium-Doped Poly-Si:Ga/SiO2 Passivated Emitters to n-Cz Wafers With iVoc >730 mV

Abstract

Bibliographical note

NREL Publication Number

Keywords

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