Gallium Oxide Heterojunction Diodes for Improved High-Temperature Performance: arXiv:2204.00112 [eess.SY]

Shahadat Sohel, Ramchandra Kotecha, Imran Khan, Karen Heinselman, Sreekant Narumanchi, M. Tellekamp, Andriy Zakutayev

Research output: Contribution to journalArticle


..beta..-Ga2O3 based semiconductor devices are expected to have significantly improved high-power and high-temperature performance due to its ultra-wide bandgap of close to 5 eV. However, the high-temperature operation of these ultra-wide-bandgap devices is usually limited by the relatively low 1-2 eV built-in potential at the Schottky barrier with most high-work-function metals. Here, we report heterojunction p-NiO/n-..beta..-Ga2O3 diodes fabrication and optimization for high-temperature device applications, demonstrating a current rectification ratio of more than 106 at 410 degrees C. The NiO heterojunction diode can achieve higher turn-on voltage and lower reverse leakage current compared to the Ni-based Schottky diode fabricated on the same single crystal ..beta..-Ga2O3 substrate, despite charge transport dominated by interfacial recombination. Electrical characterization and device modeling show that these advantages are due to a higher built-in potential and additional band offset. These results suggest that heterojunction p-n diodes based on ..beta..-Ga2O3 can significantly improve high-temperature electronic device and sensor performance.
Original languageAmerican English
Number of pages15
StatePublished - 2022

Bibliographical note

See NREL/JA-5K00-87688 for final paper as published in Physica Status Solidi A: Applications and Materials Science

NREL Publication Number

  • NREL/JA-5K00-83302


  • electronics
  • Ga2O3
  • heterojunction
  • NiO


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