Gallium Oxide Heterojunction Diodes for Improved High-Temperature Performance: arXiv:2204.00112 [eess.SY]

Shahadat Sohel; Ramchandra Kotecha; Imran Khan; Karen Heinselman; Sreekant Narumanchi; M. Tellekamp; Andriy Zakutayev

doi:10.48550/arXiv.2204.00112

Gallium Oxide Heterojunction Diodes for Improved High-Temperature Performance: arXiv:2204.00112 [eess.SY]

Shahadat Sohel, Ramchandra Kotecha, Imran Khan, Karen Heinselman, Sreekant Narumanchi, M. Tellekamp, Andriy Zakutayev

National Renewable Energy Laboratory

Research output: Contribution to journal › Article

Abstract

..beta..-Ga2O3 based semiconductor devices are expected to have significantly improved high-power and high-temperature performance due to its ultra-wide bandgap of close to 5 eV. However, the high-temperature operation of these ultra-wide-bandgap devices is usually limited by the relatively low 1-2 eV built-in potential at the Schottky barrier with most high-work-function metals. Here, we report heterojunction p-NiO/n-..beta..-Ga2O3 diodes fabrication and optimization for high-temperature device applications, demonstrating a current rectification ratio of more than 106 at 410 degrees C. The NiO heterojunction diode can achieve higher turn-on voltage and lower reverse leakage current compared to the Ni-based Schottky diode fabricated on the same single crystal ..beta..-Ga2O3 substrate, despite charge transport dominated by interfacial recombination. Electrical characterization and device modeling show that these advantages are due to a higher built-in potential and additional band offset. These results suggest that heterojunction p-n diodes based on ..beta..-Ga2O3 can significantly improve high-temperature electronic device and sensor performance.

Original language	American English
Number of pages	15
Journal	ArXiv.org
DOIs	https://doi.org/10.48550/arXiv.2204.00112
State	Published - 2022

Bibliographical note

See NREL/JA-5K00-87688 for final paper as published in Physica Status Solidi A: Applications and Materials Science

NREL Publication Number

NREL/JA-5K00-83302

Keywords

electronics
Ga2O3
heterojunction
NiO

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10.48550/arXiv.2204.00112

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@article{57635661bbb64e7a8818c040346f8220,

title = "Gallium Oxide Heterojunction Diodes for Improved High-Temperature Performance: arXiv:2204.00112 [eess.SY]",

abstract = "..beta..-Ga2O3 based semiconductor devices are expected to have significantly improved high-power and high-temperature performance due to its ultra-wide bandgap of close to 5 eV. However, the high-temperature operation of these ultra-wide-bandgap devices is usually limited by the relatively low 1-2 eV built-in potential at the Schottky barrier with most high-work-function metals. Here, we report heterojunction p-NiO/n-..beta..-Ga2O3 diodes fabrication and optimization for high-temperature device applications, demonstrating a current rectification ratio of more than 106 at 410 degrees C. The NiO heterojunction diode can achieve higher turn-on voltage and lower reverse leakage current compared to the Ni-based Schottky diode fabricated on the same single crystal ..beta..-Ga2O3 substrate, despite charge transport dominated by interfacial recombination. Electrical characterization and device modeling show that these advantages are due to a higher built-in potential and additional band offset. These results suggest that heterojunction p-n diodes based on ..beta..-Ga2O3 can significantly improve high-temperature electronic device and sensor performance.",

keywords = "electronics, Ga2O3, heterojunction, NiO",

author = "Shahadat Sohel and Ramchandra Kotecha and Imran Khan and Karen Heinselman and Sreekant Narumanchi and M. Tellekamp and Andriy Zakutayev",

note = "See NREL/JA-5K00-87688 for final paper as published in Physica Status Solidi A: Applications and Materials Science",

year = "2022",

doi = "10.48550/arXiv.2204.00112",

language = "American English",

journal = "ArXiv.org",

issn = "2331-8422",

publisher = "Cornell University",

}

TY - JOUR

T1 - Gallium Oxide Heterojunction Diodes for Improved High-Temperature Performance

T2 - arXiv:2204.00112 [eess.SY]

AU - Sohel, Shahadat

AU - Kotecha, Ramchandra

AU - Khan, Imran

AU - Heinselman, Karen

AU - Narumanchi, Sreekant

AU - Tellekamp, M.

AU - Zakutayev, Andriy

N1 - See NREL/JA-5K00-87688 for final paper as published in Physica Status Solidi A: Applications and Materials Science

PY - 2022

Y1 - 2022

N2 - ..beta..-Ga2O3 based semiconductor devices are expected to have significantly improved high-power and high-temperature performance due to its ultra-wide bandgap of close to 5 eV. However, the high-temperature operation of these ultra-wide-bandgap devices is usually limited by the relatively low 1-2 eV built-in potential at the Schottky barrier with most high-work-function metals. Here, we report heterojunction p-NiO/n-..beta..-Ga2O3 diodes fabrication and optimization for high-temperature device applications, demonstrating a current rectification ratio of more than 106 at 410 degrees C. The NiO heterojunction diode can achieve higher turn-on voltage and lower reverse leakage current compared to the Ni-based Schottky diode fabricated on the same single crystal ..beta..-Ga2O3 substrate, despite charge transport dominated by interfacial recombination. Electrical characterization and device modeling show that these advantages are due to a higher built-in potential and additional band offset. These results suggest that heterojunction p-n diodes based on ..beta..-Ga2O3 can significantly improve high-temperature electronic device and sensor performance.

AB - ..beta..-Ga2O3 based semiconductor devices are expected to have significantly improved high-power and high-temperature performance due to its ultra-wide bandgap of close to 5 eV. However, the high-temperature operation of these ultra-wide-bandgap devices is usually limited by the relatively low 1-2 eV built-in potential at the Schottky barrier with most high-work-function metals. Here, we report heterojunction p-NiO/n-..beta..-Ga2O3 diodes fabrication and optimization for high-temperature device applications, demonstrating a current rectification ratio of more than 106 at 410 degrees C. The NiO heterojunction diode can achieve higher turn-on voltage and lower reverse leakage current compared to the Ni-based Schottky diode fabricated on the same single crystal ..beta..-Ga2O3 substrate, despite charge transport dominated by interfacial recombination. Electrical characterization and device modeling show that these advantages are due to a higher built-in potential and additional band offset. These results suggest that heterojunction p-n diodes based on ..beta..-Ga2O3 can significantly improve high-temperature electronic device and sensor performance.

KW - electronics

KW - Ga2O3

KW - heterojunction

KW - NiO

U2 - 10.48550/arXiv.2204.00112

DO - 10.48550/arXiv.2204.00112

M3 - Article

SN - 2331-8422

JO - ArXiv.org

JF - ArXiv.org

ER -

Gallium Oxide Heterojunction Diodes for Improved High-Temperature Performance: arXiv:2204.00112 [eess.SY]

Abstract

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NREL Publication Number

Keywords

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