Gamma-L-X Mixed Symmetry of Nitrogen-Induced States in GaAs1-xNx Probed by Resonant Raman Scattering

M. J. Seong; A. Mascarenhas; J. F. Geisz

doi:10.1063/1.1399010

Gamma-L-X Mixed Symmetry of Nitrogen-Induced States in GaAs1-xNx Probed by Resonant Raman Scattering

M. J. Seong, A. Mascarenhas, J. F. Geisz

Chemistry and Nanoscience

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

32 Scopus Citations

Abstract

A resonant Raman scattering study near the nitrogen-induced E₊ state in GaAs_1-xN_x at 80 K with special emphasis on all the zone-boundary phonons is used to investigate the full symmetry of the E₊ state. We have observed that various phonons at the L- and X-zone boundaries not only emerge as strong and sharp Raman features for excitations near the E₊ transition but also exhibit the same intensity resonance enhancement as observed for the zone center phonons, longitudinal-optical (Γ) and transverse-optical (Γ). Our data provide strong evidence of significant L and X components in the wave function of the nitrogen-induced E₊ state in GaAs_1-xN_x.

Original language	American English
Pages (from-to)	1297-1299
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	9
DOIs	https://doi.org/10.1063/1.1399010
State	Published - 27 Aug 2001

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NREL/JA-590-31100

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10.1063/1.1399010

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@article{a0938019b06f486cb8c3e626742abfff,

title = "Gamma-L-X Mixed Symmetry of Nitrogen-Induced States in GaAs1-xNx Probed by Resonant Raman Scattering",

abstract = "A resonant Raman scattering study near the nitrogen-induced E+ state in GaAs1-xNx at 80 K with special emphasis on all the zone-boundary phonons is used to investigate the full symmetry of the E+ state. We have observed that various phonons at the L- and X-zone boundaries not only emerge as strong and sharp Raman features for excitations near the E+ transition but also exhibit the same intensity resonance enhancement as observed for the zone center phonons, longitudinal-optical (Γ) and transverse-optical (Γ). Our data provide strong evidence of significant L and X components in the wave function of the nitrogen-induced E+ state in GaAs1-xNx.",

author = "Seong, {M. J.} and A. Mascarenhas and Geisz, {J. F.}",

year = "2001",

month = aug,

day = "27",

doi = "10.1063/1.1399010",

language = "American English",

volume = "79",

pages = "1297--1299",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Gamma-L-X Mixed Symmetry of Nitrogen-Induced States in GaAs1-xNx Probed by Resonant Raman Scattering

AU - Seong, M. J.

AU - Mascarenhas, A.

AU - Geisz, J. F.

PY - 2001/8/27

Y1 - 2001/8/27

N2 - A resonant Raman scattering study near the nitrogen-induced E+ state in GaAs1-xNx at 80 K with special emphasis on all the zone-boundary phonons is used to investigate the full symmetry of the E+ state. We have observed that various phonons at the L- and X-zone boundaries not only emerge as strong and sharp Raman features for excitations near the E+ transition but also exhibit the same intensity resonance enhancement as observed for the zone center phonons, longitudinal-optical (Γ) and transverse-optical (Γ). Our data provide strong evidence of significant L and X components in the wave function of the nitrogen-induced E+ state in GaAs1-xNx.

AB - A resonant Raman scattering study near the nitrogen-induced E+ state in GaAs1-xNx at 80 K with special emphasis on all the zone-boundary phonons is used to investigate the full symmetry of the E+ state. We have observed that various phonons at the L- and X-zone boundaries not only emerge as strong and sharp Raman features for excitations near the E+ transition but also exhibit the same intensity resonance enhancement as observed for the zone center phonons, longitudinal-optical (Γ) and transverse-optical (Γ). Our data provide strong evidence of significant L and X components in the wave function of the nitrogen-induced E+ state in GaAs1-xNx.

UR - http://www.scopus.com/inward/record.url?scp=0040752659&partnerID=8YFLogxK

U2 - 10.1063/1.1399010

DO - 10.1063/1.1399010

M3 - Article

AN - SCOPUS:0040752659

SN - 0003-6951

VL - 79

SP - 1297

EP - 1299

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Gamma-L-X Mixed Symmetry of Nitrogen-Induced States in GaAs1-xNx Probed by Resonant Raman Scattering

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