GaNPAs Solar Cells Lattice-Matched to GaP

J. F. Geisz; D. J. Friedman; Sarah Kurtz

GaNPAs Solar Cells Lattice-Matched to GaP

J. F. Geisz, D. J. Friedman, Sarah Kurtz

Research output: Contribution to conference › Paper › peer-review

42 Scopus Citations

Abstract

III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaN_xP_1-x-yAS_y is a direct-gap III-V alloy that can be grown lattice-matched to Si when y = 4.7 × - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaN_xP_1-x-yAs_y on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaN_xP_1-x-yAs_y solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

Original language	American English
Pages	864-867
Number of pages	4
State	Published - 2002
Event	29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States Duration: 19 May 2002 → 24 May 2002

Conference

Conference	29th IEEE Photovoltaic Specialists Conference
Country/Territory	United States
City	New Orleans, LA
Period	19/05/02 → 24/05/02

Bibliographical note

For preprint version including full text online document, see NREL/CP-520-32200

NREL Publication Number

NREL/CP-520-33723

Cite this

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title = "GaNPAs Solar Cells Lattice-Matched to GaP",

abstract = "III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yASy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y = 4.7 × - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.",

author = "Geisz, {J. F.} and Friedman, {D. J.} and Sarah Kurtz",

note = "For preprint version including full text online document, see NREL/CP-520-32200; 29th IEEE Photovoltaic Specialists Conference ; Conference date: 19-05-2002 Through 24-05-2002",

year = "2002",

language = "American English",

pages = "864--867",

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TY - CONF

T1 - GaNPAs Solar Cells Lattice-Matched to GaP

AU - Geisz, J. F.

AU - Friedman, D. J.

AU - Kurtz, Sarah

N1 - For preprint version including full text online document, see NREL/CP-520-32200

PY - 2002

Y1 - 2002

N2 - III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yASy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y = 4.7 × - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

AB - III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yASy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y = 4.7 × - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

UR - http://www.scopus.com/inward/record.url?scp=0036953380&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0036953380

SP - 864

EP - 867

T2 - 29th IEEE Photovoltaic Specialists Conference

Y2 - 19 May 2002 through 24 May 2002

ER -

GaNPAs Solar Cells Lattice-Matched to GaP

Abstract

Conference

Bibliographical note

NREL Publication Number

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