GaNPAs Solar Cells Lattice-Matched to GaP

Research output: Contribution to conferencePaperpeer-review

41 Scopus Citations

Abstract

III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yASy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y = 4.7 × - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

Original languageAmerican English
Pages864-867
Number of pages4
StatePublished - 2002
Event29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States
Duration: 19 May 200224 May 2002

Conference

Conference29th IEEE Photovoltaic Specialists Conference
Country/TerritoryUnited States
CityNew Orleans, LA
Period19/05/0224/05/02

Bibliographical note

For preprint version including full text online document, see NREL/CP-520-32200

NREL Publication Number

  • NREL/CP-520-33723

Fingerprint

Dive into the research topics of 'GaNPAs Solar Cells Lattice-Matched to GaP'. Together they form a unique fingerprint.

Cite this