Abstract
This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y = 4.7x - 0.1. Wepropose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss theprospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.
| Original language | American English |
|---|---|
| Number of pages | 7 |
| State | Published - 2002 |
| Event | 29th IEEE PV Specialists Conference - New Orleans, Louisiana Duration: 20 May 2002 → 24 May 2002 |
Conference
| Conference | 29th IEEE PV Specialists Conference |
|---|---|
| City | New Orleans, Louisiana |
| Period | 20/05/02 → 24/05/02 |
Bibliographical note
Prepared for the 29th IEEE PV Specialists Conference, 20-24 May 2002, New Orleans, LouisianaNREL Publication Number
- NREL/CP-520-32200
Keywords
- amorphous silicon
- capacitance voltage (CV)
- front-side contacts
- III-V semiconductors
- lattice-match
- metal-organic chemical vapor phase
- multijunction solar cells
- PV
- quantum efficiency (QE)
- short circuit current (ISC)
- spectral ellipsometry (SE)