GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    Research output: Contribution to conferencePaper


    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y = 4.7x - 0.1. Wepropose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss theprospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.
    Original languageAmerican English
    Number of pages7
    StatePublished - 2002
    Event29th IEEE PV Specialists Conference - New Orleans, Louisiana
    Duration: 20 May 200224 May 2002


    Conference29th IEEE PV Specialists Conference
    CityNew Orleans, Louisiana

    Bibliographical note

    Prepared for the 29th IEEE PV Specialists Conference, 20-24 May 2002, New Orleans, Louisiana

    NREL Publication Number

    • NREL/CP-520-32200


    • amorphous silicon
    • capacitance voltage (CV)
    • front-side contacts
    • III-V semiconductors
    • lattice-match
    • metal-organic chemical vapor phase
    • multijunction solar cells
    • PV
    • quantum efficiency (QE)
    • short circuit current (ISC)
    • spectral ellipsometry (SE)


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