Abstract
In this work we report the characteristics of ternary, GaInSb (Eg=0.70 eV) and quarternary, GaInAsSb (Eg=0.58 eV) diffused junction photovoltaic devices. The unique feature of the quarternary device is the extended long-wavelength response to 2.1 microns enabling the efficient use of the blackbody-like thermal sources operating at 1373 K in thermophotovoltaic energy conversion systems. Theternary device was fabricated by diffusing zinc into a n-type (100) oriented GaInSb substrate. For the quarternary, a four micron thick Te doped GaInAsSb layer grown by LPE on a n-type GaSb(100) wafer was used as the starting substrate for zinc diffusion. The ternary device exhibits an open circuit voltage of 0.38V, Fill Factor of 0.63 and a short circuit current of 0.8 A/cm2, while thecorresponding values for the quarternary device are 0.25V, 0.58 and 0.8 A/cm2, respectively. The peak internal quantum efficiency for the ternary is over 90% and that of the quarternary is above 75%. Process optimization should improve the performance characteristics of the quarternary.
| Original language | American English |
|---|---|
| Pages | 105-115 |
| Number of pages | 11 |
| State | Published - 1997 |
| Event | Thermophotovoltaic Generation of Electricity: Third NREL Conference - Colorado Springs, Colorado Duration: 1 May 1997 → 1 May 1997 |
Conference
| Conference | Thermophotovoltaic Generation of Electricity: Third NREL Conference |
|---|---|
| City | Colorado Springs, Colorado |
| Period | 1/05/97 → 1/05/97 |
NREL Publication Number
- NREL/CP-520-24415
