GaSb Based Ternary and Quaternary Diffused Junction Devices for TPV Applications

    Research output: Contribution to conferencePaper


    In this work we report the characteristics of ternary, GaInSb (Eg=0.70 eV) and quarternary, GaInAsSb (Eg=0.58 eV) diffused junction photovoltaic devices. The unique feature of the quarternary device is the extended long-wavelength response to 2.1 microns enabling the efficient use of the blackbody-like thermal sources operating at 1373 K in thermophotovoltaic energy conversion systems. Theternary device was fabricated by diffusing zinc into a n-type (100) oriented GaInSb substrate. For the quarternary, a four micron thick Te doped GaInAsSb layer grown by LPE on a n-type GaSb(100) wafer was used as the starting substrate for zinc diffusion. The ternary device exhibits an open circuit voltage of 0.38V, Fill Factor of 0.63 and a short circuit current of 0.8 A/cm2, while thecorresponding values for the quarternary device are 0.25V, 0.58 and 0.8 A/cm2, respectively. The peak internal quantum efficiency for the ternary is over 90% and that of the quarternary is above 75%. Process optimization should improve the performance characteristics of the quarternary.
    Original languageAmerican English
    Number of pages11
    StatePublished - 1997
    EventThermophotovoltaic Generation of Electricity: Third NREL Conference - Colorado Springs, Colorado
    Duration: 1 May 19971 May 1997


    ConferenceThermophotovoltaic Generation of Electricity: Third NREL Conference
    CityColorado Springs, Colorado

    NREL Publication Number

    • NREL/CP-520-24415


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