GaSb/InGaAs Quantum Dot-Well Solar Cells

Ramesh B. Laghumavarapu; Baolai L. Liang; Zachery Bittner; Tugba S. Navruz; Seth M. Hubbard; Andrew Norman; Diana L. Huffaker

doi:10.1109/PVSC.2013.6744150

GaSb/InGaAs Quantum Dot-Well Solar Cells

Ramesh B. Laghumavarapu, Baolai L. Liang, Zachery Bittner, Tugba S. Navruz, Seth M. Hubbard, Andrew Norman, Diana L. Huffaker

Materials Science

Research output: Contribution to conference › Paper › peer-review

2 Scopus Citations

Abstract

GaSb/InGaAs quantum dot-well (QDW) hybrid active regions with type-II band alignment are explored for increasing infrared absorption in GaAs solar cells. GaAs p-i-n structures studied in this work comprise five layers of either GaSb quantum dots (QD), InGaAs quantum wells (QW) or GaSb/InGaAs QDWs in the i-region. The QDW solar cells exhibited superior performance beyond the GaAs band edge compared to the QW and QD solar cells. In QDW solar cells improved efficiency is observed over QD solar cells due to additional QW absorption. An analysis of bulk response degradation in a QDW solar cell is also presented. Improved photo response in QDW solar cells over QW and QD solar cells proves the potential of QDW hybrid structures for realizing high efficiency intermediate band solar cells.

Original language	American English
Pages	292-295
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2013.6744150 https://doi.org/10.1109/PVSC.2013.6744150
State	Published - 2013
Event	39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States Duration: 16 Jun 2013 → 21 Jun 2013

Conference

Conference	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country/Territory	United States
City	Tampa, FL
Period	16/06/13 → 21/06/13

NREL Publication Number

NREL/CP-5200-61942

Keywords

Dot in well
Intermediate band solar cells
Quantum dot
Quantum wells

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title = "GaSb/InGaAs Quantum Dot-Well Solar Cells",

abstract = "GaSb/InGaAs quantum dot-well (QDW) hybrid active regions with type-II band alignment are explored for increasing infrared absorption in GaAs solar cells. GaAs p-i-n structures studied in this work comprise five layers of either GaSb quantum dots (QD), InGaAs quantum wells (QW) or GaSb/InGaAs QDWs in the i-region. The QDW solar cells exhibited superior performance beyond the GaAs band edge compared to the QW and QD solar cells. In QDW solar cells improved efficiency is observed over QD solar cells due to additional QW absorption. An analysis of bulk response degradation in a QDW solar cell is also presented. Improved photo response in QDW solar cells over QW and QD solar cells proves the potential of QDW hybrid structures for realizing high efficiency intermediate band solar cells.",

keywords = "Dot in well, Intermediate band solar cells, Quantum dot, Quantum wells",

author = "Laghumavarapu, {Ramesh B.} and Liang, {Baolai L.} and Zachery Bittner and Navruz, {Tugba S.} and Hubbard, {Seth M.} and Andrew Norman and Huffaker, {Diana L.}",

year = "2013",

doi = "10.1109/PVSC.2013.6744150",

language = "American English",

pages = "292--295",

note = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013 ; Conference date: 16-06-2013 Through 21-06-2013",

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TY - CONF

T1 - GaSb/InGaAs Quantum Dot-Well Solar Cells

AU - Laghumavarapu, Ramesh B.

AU - Liang, Baolai L.

AU - Bittner, Zachery

AU - Navruz, Tugba S.

AU - Hubbard, Seth M.

AU - Norman, Andrew

AU - Huffaker, Diana L.

PY - 2013

Y1 - 2013

N2 - GaSb/InGaAs quantum dot-well (QDW) hybrid active regions with type-II band alignment are explored for increasing infrared absorption in GaAs solar cells. GaAs p-i-n structures studied in this work comprise five layers of either GaSb quantum dots (QD), InGaAs quantum wells (QW) or GaSb/InGaAs QDWs in the i-region. The QDW solar cells exhibited superior performance beyond the GaAs band edge compared to the QW and QD solar cells. In QDW solar cells improved efficiency is observed over QD solar cells due to additional QW absorption. An analysis of bulk response degradation in a QDW solar cell is also presented. Improved photo response in QDW solar cells over QW and QD solar cells proves the potential of QDW hybrid structures for realizing high efficiency intermediate band solar cells.

AB - GaSb/InGaAs quantum dot-well (QDW) hybrid active regions with type-II band alignment are explored for increasing infrared absorption in GaAs solar cells. GaAs p-i-n structures studied in this work comprise five layers of either GaSb quantum dots (QD), InGaAs quantum wells (QW) or GaSb/InGaAs QDWs in the i-region. The QDW solar cells exhibited superior performance beyond the GaAs band edge compared to the QW and QD solar cells. In QDW solar cells improved efficiency is observed over QD solar cells due to additional QW absorption. An analysis of bulk response degradation in a QDW solar cell is also presented. Improved photo response in QDW solar cells over QW and QD solar cells proves the potential of QDW hybrid structures for realizing high efficiency intermediate band solar cells.

KW - Dot in well

KW - Intermediate band solar cells

KW - Quantum dot

KW - Quantum wells

UR - http://www.scopus.com/inward/record.url?scp=84896468758&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2013.6744150

DO - 10.1109/PVSC.2013.6744150

M3 - Paper

AN - SCOPUS:84896468758

SP - 292

EP - 295

T2 - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013

Y2 - 16 June 2013 through 21 June 2013

ER -

GaSb/InGaAs Quantum Dot-Well Solar Cells

Abstract

Conference

NREL Publication Number

Keywords

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