GaxIn1-xAs Thermophotovoltaic Converters

M. W. Wanlass, J. S. Ward, K. A. Emery, M. M. Al-Jassim, K. M. Jones, T. J. Coutts

Research output: Contribution to journalArticlepeer-review

52 Scopus Citations

Abstract

Preliminary research into the development of single-junction GaxIn1-xAs thermophotovoltaic (TPV) power converters is reviewed. The devices structures are grown epitaxially on single-crystal InP substrates. Converter band gaps of 0.50-0.74 eV have been considered in accordance with modeling calculations. A 1-sun, AM0 efficiency of 12.8% is reported for a lattice-matched, 0.74-eV converter. Converters with lower band gaps are fabricated using lattice-mismatched, compositionally graded structures. Functional TPV converters with good performance characteristics have been demonstrated for band gaps as low as 0.5 eV.

Original languageAmerican English
Pages (from-to)405-417
Number of pages13
JournalSolar Energy Materials and Solar Cells
Volume41-42
Issue number1-4
DOIs
StatePublished - 1996

NREL Publication Number

  • NREL/JA-21749

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