Abstract
Preliminary research into the development of single-junction GaxIn1-xAs thermophotovoltaic (TPV) power converters is reviewed. The devices structures are grown epitaxially on single-crystal InP substrates. Converter band gaps of 0.50-0.74 eV have been considered in accordance with modeling calculations. A 1-sun, AM0 efficiency of 12.8% is reported for a lattice-matched, 0.74-eV converter. Converters with lower band gaps are fabricated using lattice-mismatched, compositionally graded structures. Functional TPV converters with good performance characteristics have been demonstrated for band gaps as low as 0.5 eV.
Original language | American English |
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Pages (from-to) | 405-417 |
Number of pages | 13 |
Journal | Solar Energy Materials and Solar Cells |
Volume | 41-42 |
Issue number | 1-4 |
DOIs | |
State | Published - 1996 |
NREL Publication Number
- NREL/JA-21749