Abstract
Preliminary research into the development of single-junction GaxIn1-xAs thermophotovoltaic (TPV) power converters is reviewed. The devices structures are grown epitaxially on single-crystal InP substrates. Converter band gaps of 0.50-0.74 eV have been considered in accordance with modeling calculations. A 1-sun, AMO efficiency of 12.8% is reported for a lattice-matched, 0.74-eV converter. Converters with lower band gaps are fabricated using lattice-mismatched, compositionally graded structures. Functional TPV converters with good performance characteristics have been demonstrated for band gaps as low as 0.5 eV.
Original language | American English |
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Pages | 1685-1691 |
Number of pages | 7 |
State | Published - 1994 |
Event | Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2) - Waikoloa, HI, USA Duration: 5 Dec 1994 → 9 Dec 1994 |
Conference
Conference | Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2) |
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City | Waikoloa, HI, USA |
Period | 5/12/94 → 9/12/94 |
NREL Publication Number
- NREL/CP-413-6793