GaxIn1-xAs Thermophotovoltaic Converters

M. W. Wanlass, J. S. Ward, K. A. Emery, T. J. Coutts

Research output: Contribution to conferencePaperpeer-review

8 Scopus Citations


Preliminary research into the development of single-junction GaxIn1-xAs thermophotovoltaic (TPV) power converters is reviewed. The devices structures are grown epitaxially on single-crystal InP substrates. Converter band gaps of 0.50-0.74 eV have been considered in accordance with modeling calculations. A 1-sun, AMO efficiency of 12.8% is reported for a lattice-matched, 0.74-eV converter. Converters with lower band gaps are fabricated using lattice-mismatched, compositionally graded structures. Functional TPV converters with good performance characteristics have been demonstrated for band gaps as low as 0.5 eV.

Original languageAmerican English
Number of pages7
StatePublished - 1994
EventProceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2) - Waikoloa, HI, USA
Duration: 5 Dec 19949 Dec 1994


ConferenceProceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2)
CityWaikoloa, HI, USA

NREL Publication Number

  • NREL/CP-413-6793


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