Ge Concentrator Cells for III-V Multijunction Devices

D. J. Friedman; J. M. Olson; S. Ward; T. Moriarty; K. Emery; Sarah Kurtz; A. Duda; R. R. King; H. L. Cotal; D. R. Lillington; J. H. Ermer; N. H. Karam

doi:10.1109/PVSC.2000.916046

Ge Concentrator Cells for III-V Multijunction Devices

D. J. Friedman, J. M. Olson, S. Ward, T. Moriarty, K. Emery, Sarah Kurtz, A. Duda, R. R. King, H. L. Cotal, D. R. Lillington, J. H. Ermer, N. H. Karam

Research output: Contribution to conference › Paper › peer-review

21 Scopus Citations

Abstract

We identify a failure mode due to a photoactive back contact for Ge concentrator solar cells. This problem manifests itself as a leveling off and subsequent decrease of open-circuit voltage (V_OC) as the concentration increases above ∼20 suns. Correction of this problem yields a much improved Ge cell for which V_oc increases in an almost ideal n=1 manner from 0.2 volts at one sun to 0.4 volts at 1400 suns. This cell's fill factor remains at or above its one-sun value up to 500 suns, confirming that this cell is fully suitable for high-concentration use. We show that solving the back-contact problem can significantly improve the high-concentration performance of GaInP/GaAs/Ge three-junction solar cells.

Original language	American English
Pages	965-967
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC.2000.916046
State	Published - 2000
Event	28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States Duration: 15 Sep 2000 → 22 Sep 2000

Conference

Conference	28th IEEE Photovoltaic Specialists Conference, PVSC 2000
Country/Territory	United States
City	Anchorage
Period	15/09/00 → 22/09/00

Bibliographical note

Publisher Copyright:
© 2000 IEEE.

NREL Publication Number

NREL/CP-520-28913

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10.1109/PVSC.2000.916046

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Friedman, D. J., Olson, J. M., Ward, S., Moriarty, T., Emery, K., Kurtz, S., Duda, A., King, R. R., Cotal, H. L., Lillington, D. R., Ermer, J. H., & Karam, N. H. (2000). Ge Concentrator Cells for III-V Multijunction Devices. 965-967. Paper presented at 28th IEEE Photovoltaic Specialists Conference, PVSC 2000, Anchorage, United States. https://doi.org/10.1109/PVSC.2000.916046

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title = "Ge Concentrator Cells for III-V Multijunction Devices",

abstract = "We identify a failure mode due to a photoactive back contact for Ge concentrator solar cells. This problem manifests itself as a leveling off and subsequent decrease of open-circuit voltage (VOC) as the concentration increases above ∼20 suns. Correction of this problem yields a much improved Ge cell for which Voc increases in an almost ideal n=1 manner from 0.2 volts at one sun to 0.4 volts at 1400 suns. This cell's fill factor remains at or above its one-sun value up to 500 suns, confirming that this cell is fully suitable for high-concentration use. We show that solving the back-contact problem can significantly improve the high-concentration performance of GaInP/GaAs/Ge three-junction solar cells.",

author = "Friedman, {D. J.} and Olson, {J. M.} and S. Ward and T. Moriarty and K. Emery and Sarah Kurtz and A. Duda and King, {R. R.} and Cotal, {H. L.} and Lillington, {D. R.} and Ermer, {J. H.} and Karam, {N. H.}",

note = "Publisher Copyright: {\textcopyright} 2000 IEEE.; 28th IEEE Photovoltaic Specialists Conference, PVSC 2000 ; Conference date: 15-09-2000 Through 22-09-2000",

year = "2000",

doi = "10.1109/PVSC.2000.916046",

language = "American English",

pages = "965--967",

}

Friedman, DJ, Olson, JM, Ward, S, Moriarty, T, Emery, K , Kurtz, S, Duda, A, King, RR, Cotal, HL, Lillington, DR, Ermer, JH & Karam, NH 2000, 'Ge Concentrator Cells for III-V Multijunction Devices', Paper presented at 28th IEEE Photovoltaic Specialists Conference, PVSC 2000, Anchorage, United States, 15/09/00 - 22/09/00 pp. 965-967. https://doi.org/10.1109/PVSC.2000.916046

TY - CONF

T1 - Ge Concentrator Cells for III-V Multijunction Devices

AU - Friedman, D. J.

AU - Olson, J. M.

AU - Ward, S.

AU - Moriarty, T.

AU - Emery, K.

AU - Kurtz, Sarah

AU - Duda, A.

AU - King, R. R.

AU - Cotal, H. L.

AU - Lillington, D. R.

AU - Ermer, J. H.

AU - Karam, N. H.

PY - 2000

Y1 - 2000

N2 - We identify a failure mode due to a photoactive back contact for Ge concentrator solar cells. This problem manifests itself as a leveling off and subsequent decrease of open-circuit voltage (VOC) as the concentration increases above ∼20 suns. Correction of this problem yields a much improved Ge cell for which Voc increases in an almost ideal n=1 manner from 0.2 volts at one sun to 0.4 volts at 1400 suns. This cell's fill factor remains at or above its one-sun value up to 500 suns, confirming that this cell is fully suitable for high-concentration use. We show that solving the back-contact problem can significantly improve the high-concentration performance of GaInP/GaAs/Ge three-junction solar cells.

AB - We identify a failure mode due to a photoactive back contact for Ge concentrator solar cells. This problem manifests itself as a leveling off and subsequent decrease of open-circuit voltage (VOC) as the concentration increases above ∼20 suns. Correction of this problem yields a much improved Ge cell for which Voc increases in an almost ideal n=1 manner from 0.2 volts at one sun to 0.4 volts at 1400 suns. This cell's fill factor remains at or above its one-sun value up to 500 suns, confirming that this cell is fully suitable for high-concentration use. We show that solving the back-contact problem can significantly improve the high-concentration performance of GaInP/GaAs/Ge three-junction solar cells.

UR - http://www.scopus.com/inward/record.url?scp=84949547188&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2000.916046

DO - 10.1109/PVSC.2000.916046

M3 - Paper

AN - SCOPUS:84949547188

SP - 965

EP - 967

T2 - 28th IEEE Photovoltaic Specialists Conference, PVSC 2000

Y2 - 15 September 2000 through 22 September 2000

ER -

Ge Concentrator Cells for III-V Multijunction Devices

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