General Mobility and Carrier Concentration Relationship in Transparent Amorphous Indium Zinc Oxide Films

Andrew J. Leenheer; John D. Perkins; Maikel F.A.M. Van Hest; Joseph J. Berry; Ryan P. O'Hayre; David S. Ginley

doi:10.1103/PhysRevB.77.115215

General Mobility and Carrier Concentration Relationship in Transparent Amorphous Indium Zinc Oxide Films

Andrew J. Leenheer, John D. Perkins, Maikel F.A.M. Van Hest, Joseph J. Berry, Ryan P. O'Hayre, David S. Ginley

Materials, Chemical, and Computational Science

Research output: Contribution to journal › Article › peer-review

228 Scopus Citations

Abstract

We report the dependence of the electronic properties on the metal composition and oxygen content of transparent conducting amorphous indium zinc oxide (a-IZO) films deposited by dc magnetron sputtering. a-IZO shows a clear Burstein-Moss shift with an effective optical band gap of 3.1 eV independent of the metal composition. A metal-composition-independent dependence of the mobility (μ) on carrier concentration (N) is also found for a-IZO with μmax =54 cm2 V s at N=1.3× 1020 cm-3. The electron transport, thermally activated at N≤ 1019 cm-3, becomes limited by lattice scattering at N ≈ 1020 cm-3 and then by ionized impurity scattering at N>5× 1020 cm-3.

Original language	American English
Article number	Article No. 115215
Number of pages	5
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	77
Issue number	11
DOIs	https://doi.org/10.1103/PhysRevB.77.115215 https://doi.org/10.1103/PhysRevB.77.115215
State	Published - 28 Mar 2008

NREL Publication Number

NREL/JA-520-43407

Keywords

optical properties
sputtering
transparent conductor

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Leenheer, A. J., Perkins, J. D., Van Hest, M. F. A. M., Berry, J. J., O'Hayre, R. P., & Ginley, D. S. (2008). General Mobility and Carrier Concentration Relationship in Transparent Amorphous Indium Zinc Oxide Films. Physical Review B - Condensed Matter and Materials Physics, 77(11), Article Article No. 115215. https://doi.org/10.1103/PhysRevB.77.115215, https://doi.org/10.1103/PhysRevB.77.115215

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abstract = "We report the dependence of the electronic properties on the metal composition and oxygen content of transparent conducting amorphous indium zinc oxide (a-IZO) films deposited by dc magnetron sputtering. a-IZO shows a clear Burstein-Moss shift with an effective optical band gap of 3.1 eV independent of the metal composition. A metal-composition-independent dependence of the mobility (μ) on carrier concentration (N) is also found for a-IZO with μmax =54 cm2 V s at N=1.3× 1020 cm-3. The electron transport, thermally activated at N≤ 1019 cm-3, becomes limited by lattice scattering at N ≈ 1020 cm-3 and then by ionized impurity scattering at N>5× 1020 cm-3.",

keywords = "optical properties, sputtering, transparent conductor",

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Leenheer, AJ, Perkins, JD, Van Hest, MFAM, Berry, JJ, O'Hayre, RP & Ginley, DS 2008, 'General Mobility and Carrier Concentration Relationship in Transparent Amorphous Indium Zinc Oxide Films', Physical Review B - Condensed Matter and Materials Physics, vol. 77, no. 11, Article No. 115215. https://doi.org/10.1103/PhysRevB.77.115215, https://doi.org/10.1103/PhysRevB.77.115215

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T1 - General Mobility and Carrier Concentration Relationship in Transparent Amorphous Indium Zinc Oxide Films

AU - Leenheer, Andrew J.

AU - Perkins, John D.

AU - Van Hest, Maikel F.A.M.

AU - Berry, Joseph J.

AU - O'Hayre, Ryan P.

AU - Ginley, David S.

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N2 - We report the dependence of the electronic properties on the metal composition and oxygen content of transparent conducting amorphous indium zinc oxide (a-IZO) films deposited by dc magnetron sputtering. a-IZO shows a clear Burstein-Moss shift with an effective optical band gap of 3.1 eV independent of the metal composition. A metal-composition-independent dependence of the mobility (μ) on carrier concentration (N) is also found for a-IZO with μmax =54 cm2 V s at N=1.3× 1020 cm-3. The electron transport, thermally activated at N≤ 1019 cm-3, becomes limited by lattice scattering at N ≈ 1020 cm-3 and then by ionized impurity scattering at N>5× 1020 cm-3.

AB - We report the dependence of the electronic properties on the metal composition and oxygen content of transparent conducting amorphous indium zinc oxide (a-IZO) films deposited by dc magnetron sputtering. a-IZO shows a clear Burstein-Moss shift with an effective optical band gap of 3.1 eV independent of the metal composition. A metal-composition-independent dependence of the mobility (μ) on carrier concentration (N) is also found for a-IZO with μmax =54 cm2 V s at N=1.3× 1020 cm-3. The electron transport, thermally activated at N≤ 1019 cm-3, becomes limited by lattice scattering at N ≈ 1020 cm-3 and then by ionized impurity scattering at N>5× 1020 cm-3.

KW - optical properties

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KW - transparent conductor

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JO - Physical Review B - Condensed Matter and Materials Physics

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M1 - Article No. 115215

ER -

General Mobility and Carrier Concentration Relationship in Transparent Amorphous Indium Zinc Oxide Films

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Keywords

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