Germanium-on-Nothing for Epitaxial Liftoff of GaAs Solar Cells

David Young; John Simon; Kevin Schulte; Aaron Ptak; Sanghyun Park; Jung-Sub Wi; Jihun Oh

doi:10.1016/j.joule.2019.05.013

Germanium-on-Nothing for Epitaxial Liftoff of GaAs Solar Cells

David Young, John Simon, Kevin Schulte, Aaron Ptak, Sanghyun Park, Jung-Sub Wi, Jihun Oh

Chemistry and Nanoscience

Korea Advanced Institute of Science & Technology

Research output: Contribution to journal › Article › peer-review

53 Scopus Citations

Abstract

We introduce a novel germanium-on-nothing (GON) technology to fabricate ultrathin Ge films for lightweight and thin GaAs solar cells. GON membranes formed by reorganization of cylindrical pores during annealing enable the growth and transfer of GaAs cells and substrate reuse. Compared with previous porous Ge studies, we significantly improve the surface quality of reformed Ge by engineering the initial pore morphology and surface passivation before annealing. Finally, we demonstrate, for the first time, the growth of GaAs cells on reformed Ge with an efficiency of 14.44%.

Original language	American English
Pages (from-to)	1782-1793
Number of pages	12
Journal	Joule
Volume	3
Issue number	7
DOIs	https://doi.org/10.1016/j.joule.2019.05.013 https://doi.org/10.1016/j.joule.2019.05.013
State	Published - 17 Jul 2019

Bibliographical note

Publisher Copyright:
© 2019 Elsevier Inc.

NREL Publication Number

NREL/JA-5900-73070

Keywords

epitaxial liftoff
GaAs solar cell
germanium-on-nothing
thin film
transfer

Access to Document

Cite this

@article{272e32e30d3749159187358b28e026d8,

title = "Germanium-on-Nothing for Epitaxial Liftoff of GaAs Solar Cells",

abstract = "We introduce a novel germanium-on-nothing (GON) technology to fabricate ultrathin Ge films for lightweight and thin GaAs solar cells. GON membranes formed by reorganization of cylindrical pores during annealing enable the growth and transfer of GaAs cells and substrate reuse. Compared with previous porous Ge studies, we significantly improve the surface quality of reformed Ge by engineering the initial pore morphology and surface passivation before annealing. Finally, we demonstrate, for the first time, the growth of GaAs cells on reformed Ge with an efficiency of 14.44%.",

keywords = "epitaxial liftoff, GaAs solar cell, germanium-on-nothing, thin film, transfer",

author = "David Young and John Simon and Kevin Schulte and Aaron Ptak and Sanghyun Park and Jung-Sub Wi and Jihun Oh",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier Inc.",

year = "2019",

month = jul,

day = "17",

doi = "10.1016/j.joule.2019.05.013",

language = "American English",

volume = "3",

pages = "1782--1793",

journal = "Joule",

issn = "2542-4351",

publisher = "Cell Press",

number = "7",

}

TY - JOUR

T1 - Germanium-on-Nothing for Epitaxial Liftoff of GaAs Solar Cells

AU - Young, David

AU - Simon, John

AU - Schulte, Kevin

AU - Ptak, Aaron

AU - Park, Sanghyun

AU - Wi, Jung-Sub

AU - Oh, Jihun

PY - 2019/7/17

Y1 - 2019/7/17

N2 - We introduce a novel germanium-on-nothing (GON) technology to fabricate ultrathin Ge films for lightweight and thin GaAs solar cells. GON membranes formed by reorganization of cylindrical pores during annealing enable the growth and transfer of GaAs cells and substrate reuse. Compared with previous porous Ge studies, we significantly improve the surface quality of reformed Ge by engineering the initial pore morphology and surface passivation before annealing. Finally, we demonstrate, for the first time, the growth of GaAs cells on reformed Ge with an efficiency of 14.44%.

AB - We introduce a novel germanium-on-nothing (GON) technology to fabricate ultrathin Ge films for lightweight and thin GaAs solar cells. GON membranes formed by reorganization of cylindrical pores during annealing enable the growth and transfer of GaAs cells and substrate reuse. Compared with previous porous Ge studies, we significantly improve the surface quality of reformed Ge by engineering the initial pore morphology and surface passivation before annealing. Finally, we demonstrate, for the first time, the growth of GaAs cells on reformed Ge with an efficiency of 14.44%.

KW - epitaxial liftoff

KW - GaAs solar cell

KW - germanium-on-nothing

KW - thin film

KW - transfer

UR - http://www.scopus.com/inward/record.url?scp=85068693737&partnerID=8YFLogxK

U2 - 10.1016/j.joule.2019.05.013

DO - 10.1016/j.joule.2019.05.013

M3 - Article

AN - SCOPUS:85068693737

SN - 2542-4351

VL - 3

SP - 1782

EP - 1793

JO - Joule

JF - Joule

IS - 7

ER -

Germanium-on-Nothing for Epitaxial Liftoff of GaAs Solar Cells

Abstract

Bibliographical note

NREL Publication Number

Keywords

Access to Document

Other files and links

Fingerprint

Cite this