Germanium-on-Nothing for Epitaxial Liftoff of GaAs Solar Cells

David Young, John Simon, Kevin Schulte, Aaron Ptak, Sanghyun Park, Jung-Sub Wi, Jihun Oh

Research output: Contribution to journalArticlepeer-review

43 Scopus Citations

Abstract

We introduce a novel germanium-on-nothing (GON) technology to fabricate ultrathin Ge films for lightweight and thin GaAs solar cells. GON membranes formed by reorganization of cylindrical pores during annealing enable the growth and transfer of GaAs cells and substrate reuse. Compared with previous porous Ge studies, we significantly improve the surface quality of reformed Ge by engineering the initial pore morphology and surface passivation before annealing. Finally, we demonstrate, for the first time, the growth of GaAs cells on reformed Ge with an efficiency of 14.44%.

Original languageAmerican English
Pages (from-to)1782-1793
Number of pages12
JournalJoule
Volume3
Issue number7
DOIs
StatePublished - 17 Jul 2019

Bibliographical note

Publisher Copyright:
© 2019 Elsevier Inc.

NREL Publication Number

  • NREL/JA-5900-73070

Keywords

  • epitaxial liftoff
  • GaAs solar cell
  • germanium-on-nothing
  • thin film
  • transfer

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