Giant Recombination Centers in Al0.10Ga0.90As Grown by Metalorganic Chemical Vapor Deposition

J. Zhang; B. M. Keyes; S. E. Asher; R. K. Ahrenkiel; M. L. Timmons

doi:10.1063/1.109679

Giant Recombination Centers in Al0.10Ga0.90As Grown by Metalorganic Chemical Vapor Deposition

J. Zhang, B. M. Keyes, S. E. Asher, R. K. Ahrenkiel, M. L. Timmons

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Abstract

The hole lifetime in n-type Al_0.10Ga_0.90As is controlled by recombination centers with capture cross sections of about 10 ^-12 cm². Correlated time-resolved photoluminescence and deep level transient spectroscopy measurements link these centers to well-known impurity oxygen complexes. Film growth at temperatures above about 720°C eliminate these oxygen complexes from the epitaxial layer resulting in greatly improved electronic properties.

Original language	American English
Pages (from-to)	1369-1371
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	10
DOIs	https://doi.org/10.1063/1.109679 https://doi.org/10.1063/1.109679
State	Published - 1993

NREL Publication Number

NREL/JA-412-5421

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title = "Giant Recombination Centers in Al0.10Ga0.90As Grown by Metalorganic Chemical Vapor Deposition",

abstract = "The hole lifetime in n-type Al0.10Ga0.90As is controlled by recombination centers with capture cross sections of about 10 -12 cm2. Correlated time-resolved photoluminescence and deep level transient spectroscopy measurements link these centers to well-known impurity oxygen complexes. Film growth at temperatures above about 720°C eliminate these oxygen complexes from the epitaxial layer resulting in greatly improved electronic properties.",

author = "J. Zhang and Keyes, {B. M.} and Asher, {S. E.} and Ahrenkiel, {R. K.} and Timmons, {M. L.}",

year = "1993",

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journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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AU - Zhang, J.

AU - Keyes, B. M.

AU - Asher, S. E.

AU - Ahrenkiel, R. K.

AU - Timmons, M. L.

PY - 1993

Y1 - 1993

N2 - The hole lifetime in n-type Al0.10Ga0.90As is controlled by recombination centers with capture cross sections of about 10 -12 cm2. Correlated time-resolved photoluminescence and deep level transient spectroscopy measurements link these centers to well-known impurity oxygen complexes. Film growth at temperatures above about 720°C eliminate these oxygen complexes from the epitaxial layer resulting in greatly improved electronic properties.

AB - The hole lifetime in n-type Al0.10Ga0.90As is controlled by recombination centers with capture cross sections of about 10 -12 cm2. Correlated time-resolved photoluminescence and deep level transient spectroscopy measurements link these centers to well-known impurity oxygen complexes. Film growth at temperatures above about 720°C eliminate these oxygen complexes from the epitaxial layer resulting in greatly improved electronic properties.

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DO - 10.1063/1.109679

M3 - Article

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SN - 0003-6951

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Giant Recombination Centers in Al0.10Ga0.90As Grown by Metalorganic Chemical Vapor Deposition

Abstract

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