Grain Boundary and Dislocation Effects on the PV Performance of High-Purity Silicon

T. F. Ciszek; T. H. Wang; R. W. Burrows; X. Wu; J. Alleman; T. Bekkedahl; Y. S. Tsuo

doi:10.1109/PVSC.1993.347071

Grain Boundary and Dislocation Effects on the PV Performance of High-Purity Silicon

T. F. Ciszek, T. H. Wang, R. W. Burrows, X. Wu, J. Alleman, T. Bekkedahl, Y. S. Tsuo

Materials, Chemical, and Computational Science Research Operations

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

10 Scopus Citations

Abstract

To quantify the effects of grain size and dislocation defects on the minority charge carrier lifetime and photovoltaic (PV) efficiency of silicon, we grew high-purity, float-zoned (FZ) ingots with a range of grain sizes from single crystalline (dislocated and dislocation-free) down to 4 × 10^-4 squared centimeters. In situ ingot cooling rates of 18 and 89 °C min^-1 were used. Growth of FZ ingots with a range of grain sizes was accomplished by initiating growth from a fine-grained 22-mm-diameter seed cut along a diameter of a 1200-mm-diameter, chemical vapor deposited (CVD), polycrystalline Si log.

Original language	American English
Pages	101-105
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.1993.347071
State	Published - 1993
Event	Proceedings of the 23rd IEEE Photovoltaic Specialists Conference - Louisville, KY, USA Duration: 10 May 1993 → 14 May 1993

Conference

Conference	Proceedings of the 23rd IEEE Photovoltaic Specialists Conference
City	Louisville, KY, USA
Period	10/05/93 → 14/05/93

NREL Publication Number

NREL/CP-451-5550

Access to Document

10.1109/PVSC.1993.347071

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abstract = "To quantify the effects of grain size and dislocation defects on the minority charge carrier lifetime and photovoltaic (PV) efficiency of silicon, we grew high-purity, float-zoned (FZ) ingots with a range of grain sizes from single crystalline (dislocated and dislocation-free) down to 4 × 10-4 squared centimeters. In situ ingot cooling rates of 18 and 89 °C min-1 were used. Growth of FZ ingots with a range of grain sizes was accomplished by initiating growth from a fine-grained 22-mm-diameter seed cut along a diameter of a 1200-mm-diameter, chemical vapor deposited (CVD), polycrystalline Si log.",

author = "Ciszek, {T. F.} and Wang, {T. H.} and Burrows, {R. W.} and X. Wu and J. Alleman and T. Bekkedahl and Tsuo, {Y. S.}",

year = "1993",

doi = "10.1109/PVSC.1993.347071",

language = "American English",

pages = "101--105",

note = "Proceedings of the 23rd IEEE Photovoltaic Specialists Conference ; Conference date: 10-05-1993 Through 14-05-1993",

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T1 - Grain Boundary and Dislocation Effects on the PV Performance of High-Purity Silicon

AU - Ciszek, T. F.

AU - Wang, T. H.

AU - Burrows, R. W.

AU - Wu, X.

AU - Alleman, J.

AU - Bekkedahl, T.

AU - Tsuo, Y. S.

PY - 1993

Y1 - 1993

N2 - To quantify the effects of grain size and dislocation defects on the minority charge carrier lifetime and photovoltaic (PV) efficiency of silicon, we grew high-purity, float-zoned (FZ) ingots with a range of grain sizes from single crystalline (dislocated and dislocation-free) down to 4 × 10-4 squared centimeters. In situ ingot cooling rates of 18 and 89 °C min-1 were used. Growth of FZ ingots with a range of grain sizes was accomplished by initiating growth from a fine-grained 22-mm-diameter seed cut along a diameter of a 1200-mm-diameter, chemical vapor deposited (CVD), polycrystalline Si log.

AB - To quantify the effects of grain size and dislocation defects on the minority charge carrier lifetime and photovoltaic (PV) efficiency of silicon, we grew high-purity, float-zoned (FZ) ingots with a range of grain sizes from single crystalline (dislocated and dislocation-free) down to 4 × 10-4 squared centimeters. In situ ingot cooling rates of 18 and 89 °C min-1 were used. Growth of FZ ingots with a range of grain sizes was accomplished by initiating growth from a fine-grained 22-mm-diameter seed cut along a diameter of a 1200-mm-diameter, chemical vapor deposited (CVD), polycrystalline Si log.

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DO - 10.1109/PVSC.1993.347071

M3 - Paper

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T2 - Proceedings of the 23rd IEEE Photovoltaic Specialists Conference

Y2 - 10 May 1993 through 14 May 1993

ER -

Grain Boundary and Dislocation Effects on the PV Performance of High-Purity Silicon

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