Grain Boundary Character and Recombination Properties in CdTe Thin Films

H. R. Moutinho; J. Moseley; M. J. Romero; R. G. Dhere; C. S. Jiang; K. M. Jones; J. N. Duenow; Y. Yan; M. M. Al-Jassim

doi:10.1109/PVSC.2013.6745144

Grain Boundary Character and Recombination Properties in CdTe Thin Films

H. R. Moutinho, J. Moseley, M. J. Romero, R. G. Dhere, C. S. Jiang, K. M. Jones, J. N. Duenow, Y. Yan, M. M. Al-Jassim

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

13 Scopus Citations

Abstract

In this work we present a correlation between the structural and electro-optical properties of grain boundaries in CdTe thin films deposited by vapor transport technique. We were able to identify different types of grain boundaries using electron backscatter diffraction (EBSD), and investigated their recombination properties by cathodoluminescence (CL). The objective is to investigate the existence of 'good' and 'bad' boundaries in CdTe thin films, which will provide guidance for the growth of better films in the future. The crystallographic orientation, grain size, and relative fraction of different boundaries were determined by EBSD. For the comparison study, the grain boundaries were colored according to their character, and compared to the CL spectra. By applying focused ion beam (FIB) marks, we were able to analyze CL and EBSD maps taken at exactly the same areas. We present a correlation between the types of boundaries with recombination.

Original language	American English
Pages	3249-3254
Number of pages	6
DOIs	https://doi.org/10.1109/PVSC.2013.6745144 https://doi.org/10.1109/PVSC.2013.6745144
State	Published - 2013
Event	39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States Duration: 16 Jun 2013 → 21 Jun 2013

Conference

Conference	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country/Territory	United States
City	Tampa, FL
Period	16/06/13 → 21/06/13

NREL Publication Number

NREL/CP-5200-57915

Keywords

Cathodoluminescence
CdTe
Electron backscatter diffraction
Grain boundaries properties

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Moutinho, H. R., Moseley, J., Romero, M. J., Dhere, R. G., Jiang, C. S., Jones, K. M., Duenow, J. N., Yan, Y., & Al-Jassim, M. M. (2013). Grain Boundary Character and Recombination Properties in CdTe Thin Films. 3249-3254. Paper presented at 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States. https://doi.org/10.1109/PVSC.2013.6745144, https://doi.org/10.1109/PVSC.2013.6745144

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title = "Grain Boundary Character and Recombination Properties in CdTe Thin Films",

abstract = "In this work we present a correlation between the structural and electro-optical properties of grain boundaries in CdTe thin films deposited by vapor transport technique. We were able to identify different types of grain boundaries using electron backscatter diffraction (EBSD), and investigated their recombination properties by cathodoluminescence (CL). The objective is to investigate the existence of 'good' and 'bad' boundaries in CdTe thin films, which will provide guidance for the growth of better films in the future. The crystallographic orientation, grain size, and relative fraction of different boundaries were determined by EBSD. For the comparison study, the grain boundaries were colored according to their character, and compared to the CL spectra. By applying focused ion beam (FIB) marks, we were able to analyze CL and EBSD maps taken at exactly the same areas. We present a correlation between the types of boundaries with recombination.",

keywords = "Cathodoluminescence, CdTe, Electron backscatter diffraction, Grain boundaries properties",

author = "Moutinho, {H. R.} and J. Moseley and Romero, {M. J.} and Dhere, {R. G.} and Jiang, {C. S.} and Jones, {K. M.} and Duenow, {J. N.} and Y. Yan and Al-Jassim, {M. M.}",

year = "2013",

doi = "10.1109/PVSC.2013.6745144",

language = "American English",

pages = "3249--3254",

note = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013 ; Conference date: 16-06-2013 Through 21-06-2013",

}

Moutinho, HR, Moseley, J, Romero, MJ, Dhere, RG, Jiang, CS, Jones, KM, Duenow, JN, Yan, Y & Al-Jassim, MM 2013, 'Grain Boundary Character and Recombination Properties in CdTe Thin Films', Paper presented at 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 16/06/13 - 21/06/13 pp. 3249-3254. https://doi.org/10.1109/PVSC.2013.6745144, https://doi.org/10.1109/PVSC.2013.6745144

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T1 - Grain Boundary Character and Recombination Properties in CdTe Thin Films

AU - Moutinho, H. R.

AU - Moseley, J.

AU - Romero, M. J.

AU - Dhere, R. G.

AU - Jiang, C. S.

AU - Jones, K. M.

AU - Duenow, J. N.

AU - Yan, Y.

AU - Al-Jassim, M. M.

PY - 2013

Y1 - 2013

N2 - In this work we present a correlation between the structural and electro-optical properties of grain boundaries in CdTe thin films deposited by vapor transport technique. We were able to identify different types of grain boundaries using electron backscatter diffraction (EBSD), and investigated their recombination properties by cathodoluminescence (CL). The objective is to investigate the existence of 'good' and 'bad' boundaries in CdTe thin films, which will provide guidance for the growth of better films in the future. The crystallographic orientation, grain size, and relative fraction of different boundaries were determined by EBSD. For the comparison study, the grain boundaries were colored according to their character, and compared to the CL spectra. By applying focused ion beam (FIB) marks, we were able to analyze CL and EBSD maps taken at exactly the same areas. We present a correlation between the types of boundaries with recombination.

AB - In this work we present a correlation between the structural and electro-optical properties of grain boundaries in CdTe thin films deposited by vapor transport technique. We were able to identify different types of grain boundaries using electron backscatter diffraction (EBSD), and investigated their recombination properties by cathodoluminescence (CL). The objective is to investigate the existence of 'good' and 'bad' boundaries in CdTe thin films, which will provide guidance for the growth of better films in the future. The crystallographic orientation, grain size, and relative fraction of different boundaries were determined by EBSD. For the comparison study, the grain boundaries were colored according to their character, and compared to the CL spectra. By applying focused ion beam (FIB) marks, we were able to analyze CL and EBSD maps taken at exactly the same areas. We present a correlation between the types of boundaries with recombination.

KW - Cathodoluminescence

KW - CdTe

KW - Electron backscatter diffraction

KW - Grain boundaries properties

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U2 - 10.1109/PVSC.2013.6745144

DO - 10.1109/PVSC.2013.6745144

M3 - Paper

AN - SCOPUS:84896479215

SP - 3249

EP - 3254

T2 - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013

Y2 - 16 June 2013 through 21 June 2013

ER -

Grain Boundary Character and Recombination Properties in CdTe Thin Films

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Keywords

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