Abstract
The performance of thin-film, polycrystalline, Schottky-barrier GaAs solar cells are evaluated in terms of the chemistry and electrical activity of grain and grain boundary regions. Surface analysis techniques (AES, SIMS, XPS) are used to determine compositional properties which are correlated with EBIC measurements of selected areas and with photovoltaic device performance. Passivation by grain boundary oxidation is investigated, and the phase and composition of these oxides are evaluated. The quality of the intragrain material is assessed to be as important as the activity of the intergrain regions in determining the performance of these photovoltaic devices.
| Original language | American English |
|---|---|
| Pages | 1311-1315 |
| Number of pages | 5 |
| State | Published - 1980 |
| Externally published | Yes |
| Event | Conf Rec IEEE Photovoltaic Spec Conf 14th - San Diego, CA, USA Duration: 7 Jan 1980 → 10 Jan 1980 |
Conference
| Conference | Conf Rec IEEE Photovoltaic Spec Conf 14th |
|---|---|
| City | San Diego, CA, USA |
| Period | 7/01/80 → 10/01/80 |
NREL Publication Number
- ACNR/CP-213-4185
