Grain-Boundary Physics in Polycrystalline Photovoltaic Materials: Preprint

    Research output: Contribution to conferencePaper


    This paper describes a study of the atomic structure and electronic effects of grain boundaries in polycrystalline photovoltaic materials such as Si, CdTe, CuInSe2, and CuGaSe2.
    Original languageAmerican English
    Number of pages7
    StatePublished - 2008
    Event33rd IEEE Photovoltaic Specialists Conference - San Diego, California
    Duration: 11 May 200816 May 2008


    Conference33rd IEEE Photovoltaic Specialists Conference
    CitySan Diego, California

    NREL Publication Number

    • NREL/CP-520-42510


    • atomic structure
    • electronic properties
    • grain boundary (GBS)
    • impurity
    • large-area
    • polycrystalline
    • PV
    • transmission electron microscopy (TEM)


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